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1. JP2016515299 - 希土類酸化物ゲート誘電体を備えた、シリコン基板上に成長したＩＩＩ－Ｎ半導体素子

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Japan
Application Number 2015559236
Application Date 06.01.2014
Publication Number 2016515299
Publication Date 26.05.2016
Grant Number 6304899
Grant Date 16.03.2018
Publication Kind B2
IPC
H01L 21/336
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18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334Multistep processes for the manufacture of devices of the unipolar type
335Field-effect transistors
336with an insulated gate
C30B 29/38
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30CRYSTAL GROWTH
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18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
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04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth
203using physical deposition, e.g. vacuum deposition, sputtering
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18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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205using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
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66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
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02439Materials
02441Group 14 semiconducting materials
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02365Forming inorganic semiconducting materials on a substrate
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02439Materials
02455Group 13/15 materials
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02439Materials
02488Insulating materials
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21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02365Forming inorganic semiconducting materials on a substrate
02436Intermediate layers between substrates and deposited layers
02494Structure
02496Layer structure
02502consisting of two layers
Applicants トランスルーセント　　インコーポレイテッド
Inventors ダルギス，リティス
スミス，ロビン
クラーク，アンドリュー
アルクン，エルデム
レビー，マイケル
Agents 本城　雅則
丸山　温道
本城　吉子
Priority Data 13774962 22.02.2013 US
Title
(JA) 希土類酸化物ゲート誘電体を備えた、シリコン基板上に成長したＩＩＩ－Ｎ半導体素子
Abstract
(JA)

【課題】シリコン基板上に成長したIII-N素子およびその製造方法を提供する。
【解決手段】当該III-N素子は、シリコン基板10上に配置され、シリコン基板10の表面と実質的に結晶格子整合する単結晶応力補償テンプレート11を含む。GaN層12が応力補償テンプレートの表面に置かれ、実質的にそれに結晶格子整合する単結晶III-N材料の活性層14が、GaN層12の上に成長し、さらに単結晶希土類酸化物誘電体層16が、前記単結晶III-N材料の活性層14上に成長している。
【選択図】図１
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