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1. JP2016181677 - SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS

Office Japan
Application Number 2015246629
Application Date 17.12.2015
Publication Number 2016181677
Publication Date 13.10.2016
Grant Number 6493839
Grant Date 15.03.2019
Publication Kind B2
IPC
H01L 21/027
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
027Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L21/18 or H01L21/34165
H01L 21/304
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304Mechanical treatment, e.g. grinding, polishing, cutting
CPC
C09K 13/08
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
13Etching, surface-brightening or pickling compositions
04containing an inorganic acid
08containing a fluorine compound
G03F 7/423
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
26Processing photosensitive materials; Apparatus therefor
42Stripping or agents therefor
422using liquids only
423containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
G03F 7/425
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
26Processing photosensitive materials; Apparatus therefor
42Stripping or agents therefor
422using liquids only
425containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
H01L 21/31133
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques
3105After-treatment
311Etching the insulating layers ; by chemical or physical means
31127Etching organic layers
31133by chemical means
H01L 21/67
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
B05C 11/08
BPERFORMING OPERATIONS; TRANSPORTING
05SPRAYING OR ATOMISING IN GENERAL; APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL
CAPPARATUS FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL
11Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
02Apparatus for spreading or distributing liquids or other fluent materials already applied to a surface ; ; Controlling means therefor
08Spreading liquid or other fluent material by manipulating the work, e.g. tilting
Applicants SCREEN HOLDINGS CO LTD
株式会社SCREENホールディングス
Inventors AKIZUKI YUSUKE
秋月 佑介
Agents 稲岡 耕作
川崎 実夫
安田 昌秀
Priority Data 2015061287 24.03.2015 JP
Title
(EN) SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS
(JA) 基板処理方法および基板処理装置
Abstract
(EN)

PROBLEM TO BE SOLVED: To smoothly eliminate a resist from a surface of a substrate covered with the resist in which a hard layer is formed on a surface by high dose ion implantation.

SOLUTION: A substrate processing apparatus 1 includes: a spin chuck 5; and an SPM supply unit 6 which supplies a sulfuric acid/hydrogen peroxide mixture (SPM) to a substrate W held by the spin chuck 5. The SPM supply unit 6 includes: mixing means 30 which mixes a hydrogen peroxide solution with hydrofluoric acid to generate a mixture; and an SPM nozzle 14 which mixes the mixture with sulfuric acid to generate an HF mixture SPM.

SELECTED DRAWING: Figure 2

COPYRIGHT: (C)2017,JPO&INPIT

(JA)

【課題】高ドーズのイオン注入により表面に硬化層が形成されたレジストで覆われている基板の表面から、レジストを良好に除去する。
【解決手段】基板処理装置1は、スピンチャック5と、スピンチャック5に保持されている基板WにSPMを供給するSPM供給ユニット6を含む。SPM供給ユニット6は、過酸化水素水とフッ酸とを混合し、混合液を生成する混合手段30と、混合液を硫酸とを混合し、HF混合SPMを生成するSPMノズル14とを備える。
【選択図】図2