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1. JP2015503851 - 腐食保護されたボンディング接続部を有する電子デバイス、及び、該電子デバイスの製造方法

Office
Japan
Application Number 2014551543
Application Date 29.11.2012
Publication Number 2015503851
Publication Date 02.02.2015
Grant Number 5955412
Grant Date 24.06.2016
Publication Kind B2
IPC
H01L 21/60
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/06-H01L21/326162
60Attaching leads or other conductive members, to be used for carrying current to or from the device in operation
H01L 23/26
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
16Fillings or auxiliary members in containers, e.g. centering rings
18Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
26including materials for absorbing or reacting with moisture or other undesired substances
CPC
H01L 23/053
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
02Containers; Seals
04characterised by the shape ; of the container or parts, e.g. caps, walls
053the container being a hollow construction and having an insulating ; or insulated; base as a mounting for the semiconductor body
H01L 23/26
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
16Fillings or auxiliary members in containers ; or encapsulations; , e.g. centering rings
18Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
26including materials for absorbing or reacting with moisture or other undesired substances ; , e.g. getters
H01L 24/45
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
24Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
44Structure, shape, material or disposition of the wire connectors prior to the connecting process
45of an individual wire connector
H01L 24/48
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
24Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
47Structure, shape, material or disposition of the wire connectors after the connecting process
48of an individual wire connector
H01L 2224/05624
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
02Bonding areas; Manufacturing methods related thereto
04Structure, shape, material or disposition of the bonding areas prior to the connecting process
05of an individual bonding area
0554External layer
05599Material
056with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
05617the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
05624Aluminium [Al] as principal constituent
H01L 2224/45015
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
44Structure, shape, material or disposition of the wire connectors prior to the connecting process
45of an individual wire connector
45001Core members of the connector
4501Shape
45012Cross-sectional shape
45015being circular
Applicants ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング
Inventors ヨハネス デュル
ロルフ ベッカー
スヴェン ラーマース
ルッツ ミュラー
ファビアン ベーツ
ミヒャエル シュレヒト
Agents アインゼル・フェリックス=ラインハルト
久野 琢也
Title
(JA) 腐食保護されたボンディング接続部を有する電子デバイス、及び、該電子デバイスの製造方法
Abstract
(JA)

本発明は、腐食保護されたボンディング接続部を有する電子デバイス(1)と、該電子デバイスの製造方法に関する。電子デバイス(1)は、基板(4)上に少なくとも1つの半導体チップ(3)を有する。半導体チップ(3)上には、少なくとも1つの腐食の危険があるボンディング接続部が設けられている。少なくとも1つの前記半導体チップ及び少なくとも1つの腐食の危険がある前記ボンディング接続部は、気密封止するケーシング(5)によって取り囲まれている。前記ボンディング接続部は、ボンディングワイヤ接続部(2)であり、前記ボンディングワイヤ接続部(2)は、前記ケーシング(5)の中で完全に気密封止されている。前記基板(4)は、前記ケーシング(5)の中で少なくとも部分的に気密封止されており、前記基板(4)の上には、少なくとも1つの表面実装可能な加水分解性の構成部材(6)が配置されている。