Processing

Please wait...

Settings

Settings

Goto Application

1. JP2014209615 - ELECTROSTATIC CHUCK

Office
Japan
Application Number 2014064870
Application Date 26.03.2014
Publication Number 2014209615
Publication Date 06.11.2014
Grant Number 5633766
Grant Date 24.10.2014
Publication Kind B2
IPC
H01L 21/683
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
683for supporting or gripping
CPC
H01L 21/6833
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
683for supporting or gripping
6831using electrostatic chucks
6833Details of electrostatic chucks
H01L 21/67109
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67011Apparatus for manufacture or treatment
67098Apparatus for thermal treatment
67109mainly by convection
H01L 21/6831
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
683for supporting or gripping
6831using electrostatic chucks
Y10T 279/23
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
10TECHNICAL SUBJECTS COVERED BY FORMER USPC
TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
279Chucks or sockets
23with magnetic or electrostatic means
Applicants TOTO LTD
TOTO株式会社
Inventors ANADA KAZUTERU
穴田 和輝
YOSHII YUICHI
吉井 雄一
Agents 日向寺 雅彦
Priority Data 2013072121 29.03.2013 JP
2013072122 29.03.2013 JP
Title
(EN) ELECTROSTATIC CHUCK
(JA) 静電チャック
Abstract
(EN)

PROBLEM TO BE SOLVED: To provide an electrostatic chuck which can obtain high dielectric strength voltage against discharge in a gas introduction path or which can perform temperature control on an adsorption object with high uniformity in wafer temperature.

SOLUTION: An electrostatic chuck comprises: a ceramic dielectric substrate having a first principal surface for mounting an adsorption object, a second principal surface on the side opposite to the first principal surface and a through hole provided across from the second principal surface to the first principal surface; a metal base plate which supports the ceramic dielectric substrate and has a gas introduction path connected to the through hole; and an insulator plug having a ceramic porous body provided in the gas introduction path, and a ceramic insulation film which is provided between the ceramic porous body and the gas introduction path and is denser than the ceramic porous body. The ceramic insulation film digs from a surface of the ceramic porous body into the inside of the ceramic porous body.

COPYRIGHT: (C)2015,JPO&INPIT

(JA)

【課題】ガス導入路内での放電に対して高い絶縁耐圧を得ることができる、あるいは、吸着の対象物に対してウェーハ温度均一性の高い温度制御を行うことができる静電チャックを提供することを目的とする。
【解決手段】吸着の対象物を載置する第1主面と、第1主面とは反対側の第2主面と、第2主面から第1主面にかけて設けられた貫通孔と、を有するセラミック誘電体基板と、セラミック誘電体基板を支持し、貫通孔と連通するガス導入路を有する金属製のベースプレートと、ガス導入路に設けられたセラミック多孔体と、セラミック多孔体とガス導入路との間に設けられセラミック多孔体よりも緻密なセラミック絶縁膜と、を有する絶縁体プラグと、を備え、セラミック絶縁膜は、セラミック多孔体の表面からセラミック多孔体の内部に食い込んだことを特徴とする静電チャックが提供される。
【選択図】図1