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1. JP2014158035 - MULTILAYER BONDING LAYER FOR HANDLING THIN-WAFER

Office
Japan
Application Number 2014061971
Application Date 25.03.2014
Publication Number 2014158035
Publication Date 28.08.2014
Grant Number 6066105
Grant Date 06.01.2017
Publication Kind B2
IPC
H01L 21/02
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
CPC
H01L 21/2007
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth ; solid phase epitaxy
2003Characterised by the substrate
2007Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
H01L 21/6835
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
683for supporting or gripping
6835using temporarily an auxiliary support
H01L 2221/68318
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2221Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
683for supporting or gripping
68304using temporarily an auxiliary support
68318Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
H01L 2221/68327
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2221Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
683for supporting or gripping
68304using temporarily an auxiliary support
68327used during dicing or grinding
H01L 2221/6834
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2221Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
683for supporting or gripping
68304using temporarily an auxiliary support
6834used to protect an active side of a device or wafer
H01L 2221/68381
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2221Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
683for supporting or gripping
68304using temporarily an auxiliary support
68381Details of chemical or physical process used for separating the auxiliary support from a device or wafer
Applicants BREWER SCIENCE INC
ブルーワー サイエンス アイ エヌ シー.
Inventors PULIGADDA RAMA
プリガッダ ラマ
ZHONG XING-FU
チョン シン-フー
FRAME TONY D
フレイム トニー ディー.
JEREMY MCCUTCHAN
マカッチャン ジェレミー
Agents アインゼル・フェリックス=ラインハルト
久野 琢也
Priority Data 13198294 04.08.2011 US
61/371,517 06.08.2010 US
Title
(EN) MULTILAYER BONDING LAYER FOR HANDLING THIN-WAFER
(JA) 薄ウェーハハンドリングのための多層接合層
Abstract
(EN)

PROBLEM TO BE SOLVED: To provide a multilayer bonding layer system for temporarily bonding a semiconductor substrate.

SOLUTION: In this bonding system, at least one layer is directly contacted with a semiconductor substrate, and at least two layers of this system are directly contacted with each other. Some processing options are provided for execution of a specific function by a different layer in a multilayer structure. The further importance is that performance of a thin-wafer handling solution can be improved by providing improvement in thermal stability, improvement in adaptability with a severe back face processing step, impact protection of a wafer front face by encapsulation, stress alleviation at a peeling step, and reduction in defects in the front face.

COPYRIGHT: (C)2014,JPO&INPIT


(JA)

【課題】半導体基板を暫定接合する多層接合層方式を提供する。
【解決手段】本発明の接合方式では、層の少なくとも1つは半導体基板と直接接触し、この方式の少なくとも2つの層は互いに直接接触している。本発明では多層構造体内の異なる層が特定の機能を実行するため幾つかの処理選択肢が提供される。更に重要なことは、熱安定性の向上、過酷な背面処理ステップとの適合性の向上、封止によるウェーハー前面の衝撃保護、剥離ステップにおける応力の軽減、及び前面の欠陥減少を提供することによって、薄ウェーハーハンドリング溶液の性能を改善することである。
【選択図】図1