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1. JP2013545398 - 表面弾性波共振器の低加速度感度取付け

Office Japan
Application Number 2013537672
Application Date 22.09.2011
Publication Number 2013545398
Publication Date 19.12.2013
Grant Number 5818903
Grant Date 09.10.2015
Publication Kind B2
IPC
H03H 9/25
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
25Constructional features of resonators using surface acoustic waves
H03B 5/30
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
BGENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
5Generation of oscillations using amplifier with regenerative feedback from output to input
30with frequency-determining element being electromechanical resonator
CPC
H03H 9/02818
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
02Details
02535of surface acoustic wave devices
02818Means for compensation or elimination of undesirable effects
G01P 15/0975
GPHYSICS
01MEASURING; TESTING
PMEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
15Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
02by making use of inertia forces ; using solid seismic masses
08with conversion into electric or magnetic values
097by vibratory elements
0975by acoustic surface wave resonators or delay lines
H01L 2224/48091
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2224Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
42Wire connectors; Manufacturing methods related thereto
47Structure, shape, material or disposition of the wire connectors after the connecting process
48of an individual wire connector
4805Shape
4809Loop shape
48091Arched
H03H 9/02228
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
02Details
02228Guided bulk acoustic wave devices or Lamb wave devices having interdigital transducers situated in parallel planes on either side of a piezoelectric layer
H03H 9/02897
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
02Details
02535of surface acoustic wave devices
02818Means for compensation or elimination of undesirable effects
02897of strain or mechanical damage, e.g. strain due to bending influence
H03H 9/0585
HELECTRICITY
03BASIC ELECTRONIC CIRCUITRY
HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
9Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
02Details
05Holders; Supports
058for surface acoustic wave devices
0585consisting of an adhesive layer
Applicants レイセオン カンパニー
Inventors クラーク,ロジャー・エル
バーマン,セス・エイ
コズロウスキ,ロバート・イー
モントレス,ゲイリー・ケイ
Agents 小野 新次郎
小林 泰
竹内 茂雄
山本 修
大牧 綾子
Priority Data 12917738 02.11.2010 US
Title
(JA) 表面弾性波共振器の低加速度感度取付け
Abstract
(JA)

反対向きの第1の面および第2の面を有する基板(140)と、基板の第1の面に配置された第1の表面弾性波共振器(120)と、基板の第2の面に配置された第2の表面弾性波共振器(130)と、第1の表面弾性波共振器(120)と基板(140)の間に挟まれた第1の接着層(150)と、第2の表面弾性波共振器(130)と基板(140)の間に挟まれた第2の接着層(160)とを備える装置。これは、低加速度感度を有する共振器をもたらす。接着層は、遮断領域を画定するように除去される部分を有してよい。第1の表面弾性波共振器(120)に結合された同調機構が、発振器における、組立て後の共振器の加速度感度調整を可能にし得る。
【選択図】図3