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1. JP2013535805 - イオン制御式三端子素子

Office Japan
Application Number 2013517007
Application Date 03.06.2011
Publication Number 2013535805
Publication Date 12.09.2013
Grant Number 5976641
Grant Date 29.07.2016
Publication Kind B2
IPC
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334
Multistep processes for the manufacture of devices of the unipolar type
335
Field-effect transistors
336
with an insulated gate
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04
the substrate being a semiconductor body
10
including a plurality of individual components in a repetitive configuration
105
including field-effect components
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
788
with floating gate
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
78
with field effect produced by an insulated gate
792
with charge trapping gate insulator, e.g. MNOS-memory transistor
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
39
Devices using superconductivity or hyperconductivity; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
22
Devices comprising a junction of dissimilar materials, e.g. Josephson-effect devices
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
45
Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
H01L 21/336
H01L 27/105
H01L 29/788
H01L 29/792
H01L 39/22
H01L 45/00
CPC
H01L 39/223
G11C 13/0007
G11C 13/04
G11C 2213/17
G11C 2213/53
H01L 39/145
Applicants フォルシュングスツェントルム・ユーリッヒ・ゲゼルシャフト・ミット・ベシュレンクテル・ハフツング
Inventors ポッペ・ウルリヒ
ヴェーバー・ディーター
ディヴィン・ユーリー
ファーレイ・ミクハイル
Agents 江崎 光史
鍛冶澤 實
今村 良太
清田 栄章
Priority Data 102010026098.3 05.07.2010 DE
Title
(JA) イオン制御式三端子素子
Abstract
(JA)

本発明は、イオンの動きによってスイッチング可能な三端子素子に関する。この素子は、ソース電極(3)と、ドレイン電極(3)と、ソース電極とドレイン電極の間を接続する、イオンの供給及び/又は排出により電子伝導率が変化する材料から成るチャネル(2)とを備えている。本発明による三端子素子は、ゲート電極(6)と接触するイオン貯留域(5)を備え、このイオン貯留域は、ゲート電極に電圧を印加した場合にチャネルとイオンを交換できるように、チャネルと接続されている。イオン貯留域とチャネル内に存在するイオン全体をイオン貯留域とチャネルに分布させると、三端子素子に情報を保存できることが分かった。相応の駆動電圧をゲート電極に印加した場合に、そして、その場合にのみ、そのようなチャネルとイオン貯留域へのイオンの分布が変化する。従って、RRAMと異なり、「時間と電圧のジレンマ」は存在しない。