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1. JP2014154860 - SUBSTRATE PROCESSING APPARATUS

Office
Japan
Application Number 2013026282
Application Date 14.02.2013
Publication Number 2014154860
Publication Date 25.08.2014
Grant Number 6118577
Grant Date 31.03.2017
Publication Kind B2
IPC
H01L 21/304
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304Mechanical treatment, e.g. grinding, polishing, cutting
H01L 21/027
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
027Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L21/18 or H01L21/34165
H01L 21/306
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
306Chemical or electrical treatment, e.g. electrolytic etching
CPC
B01D 19/0031
BPERFORMING OPERATIONS; TRANSPORTING
01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
DSEPARATION
19Degasification of liquids
0031by filtration
B08B 3/14
BPERFORMING OPERATIONS; TRANSPORTING
08CLEANING
BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
3Cleaning by methods involving the use or presence of liquid or steam
04Cleaning involving contact with liquid
10with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity, by vibration
14Removing waste, e.g. labels, from cleaning liquid; ; Regenerating cleaning liquids
H01L 21/67017
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67011Apparatus for manufacture or treatment
67017Apparatus for fluid treatment
H01L 21/67051
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67011Apparatus for manufacture or treatment
67017Apparatus for fluid treatment
67028for cleaning followed by drying, rinsing, stripping, blasting or the like
6704for wet cleaning or washing
67051using mainly spraying means, e.g. nozzles
H01L 21/6708
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67011Apparatus for manufacture or treatment
67017Apparatus for fluid treatment
67063for etching
67075for wet etching
6708using mainly spraying means, e.g. nozzles
B01D 35/02
BPERFORMING OPERATIONS; TRANSPORTING
01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
DSEPARATION
35Other filtering devices; Auxiliary devices for filtration; Filter housing constructions
02Filters adapted for location in special places, e.g. pipe-lines, pumps, stop-cocks,
Applicants DAINIPPON SCREEN MFG CO LTD
株式会社SCREENホールディングス
Inventors ISHII JUNICHI
石井 淳一
OKAMOTO KOICHI
岡本 浩一
Agents 吉竹 英俊
有田 貴弘
Title
(EN) SUBSTRATE PROCESSING APPARATUS
(JA) 基板処理装置
Abstract
(EN)

PROBLEM TO BE SOLVED: To provide a technique for reducing an amount of particles adhering to a substrate, by a simple configuration.

SOLUTION: A substrate processing device 10 processes a substrate 9 by emitting a processing liquid from a nozzle 11. The substrate processing device 10 comprises: a supply pipe 30 whose one end is connected to the tank 21 of a processing liquid supply part 20, which supplies processing liquid, via a first filter F1 used for removal of particles and whose other end is connected to the nozzle 11; and an air bubble trapping part F2 interposed in the place between the first filter F1 and nozzle 11 in a supply pipe 30, and configured to trap air bubbles Ba1 contained in the processing liquid. Pressure loss PL2 by the air bubble trapping part F2 is substantially the same as pressure loss PL1 by the first filter, or is less than that.

COPYRIGHT: (C)2014,JPO&INPIT


(JA)

【課題】簡単な構成で、基板に付着するパーティクルの量を低減する技術を提供すること。
【解決手段】基板処理装置10は、処理液をノズル11から吐出して基板9を処理するである。基板処理装置10は、一方端が、パーティクルを除去する第1フィルターF1を介して、処理液を供給する処理液供給部20のタンク21に接続されており、他方端がノズル11に接続されている供給配管30と、供給配管30における、第1フィルターF1とノズル11との間の位置に介挿されており、処理液中に含まれる気泡Ba1を捕捉する気泡捕捉部F2と、を備えている。気泡捕捉部F2による圧力損失PL2は、前記第1フィルターによる圧力損失PL1と略同じか、それよりも小さい。
【選択図】図1