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1. JP2013089926 - DICING PROCESSING ADHESIVE TAPE FOR SEMICONDUCTOR DEVICE

Office
Japan
Application Number 2011232278
Application Date 21.10.2011
Publication Number 2013089926
Publication Date 13.05.2013
Grant Number 5019656
Grant Date 22.06.2012
Publication Kind A
IPC
H01L 21/301
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
301to subdivide a semiconductor body into separate parts, e.g. making partitions
C09J 7/02
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
7Adhesives in the form of films or foils
02on carriers
C09J 201/00
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
201Adhesives based on unspecified macromolecular compounds
CPC
H01L 21/6836
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
683for supporting or gripping
6835using temporarily an auxiliary support
6836Wafer tapes, e.g. grinding or dicing support tapes
H01L 2221/68327
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2221Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
683for supporting or gripping
68304using temporarily an auxiliary support
68327used during dicing or grinding
H01L 2221/68381
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2221Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
683for supporting or gripping
68304using temporarily an auxiliary support
68381Details of chemical or physical process used for separating the auxiliary support from a device or wafer
C09J 7/29
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIAL AS ADHESIVES
7Adhesives in the form of films or foils
20characterised by their carriers
29Laminated material
C09J 2203/326
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIAL AS ADHESIVES
2203Applications of adhesives in processes or use of adhesives in the form of films or foils
326for bonding electronic components such as wafers, chips or semiconductors
C09J 2301/162
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIAL AS ADHESIVES
2301Additional features of adhesives in the form of films or foils
10characterized by the structural features of the adhesive tape or sheet
16by the structure of the carrier layer
162the carrier being a laminate constituted by plastic layers only
Applicants FURUKAWA ELECTRIC CO LTD:THE
古河電気工業株式会社
Inventors OTA GOSHI
大田 郷史
OKAMOTO KAZUYUKI
岡本 和幸
Agents 飯田 敏三
宮前 尚祐
Title
(EN) DICING PROCESSING ADHESIVE TAPE FOR SEMICONDUCTOR DEVICE
(JA) 半導体デバイス用ダイシング加工用粘着テープ
Abstract
(EN)

PROBLEM TO BE SOLVED: To provide a dicing processing adhesive tape for a semiconductor device, reducing a wear amount of a blade and improving workability in a dicing process, and a method for manufacturing a semiconductor device chip, using the same.

SOLUTION: There is provided a dicing processing adhesive tape 100 for a semiconductor device, formed by forming a radiation curing adhesive layer 20 on a base material film 10. The base material film 10 is composed of two or more base material resin film layers. A melting point of a base material resin film layer 2 in contact with the adhesive layer is 100-120°C. A melting point of a base material resin film layer 1 adjacent to the base material resin film layer on the adhesive layer side on a reverse side to the adhesive layer is 140-150°C.

COPYRIGHT: (C)2013,JPO&INPIT


(JA)

【課題】ダイシング工程におけるブレードの磨耗量を低減させ、かつ作業性を向上させる半導体デバイス用ダイシング加工用粘着テープ、及びそれを用いた半導体デバイスチップの製造方法を提供する。
【解決手段】基材フィルム10上に放射線硬化型粘着剤層20を形成してなる半導体デバイスダイシング用粘着テープ100であって、前記基材フィルム10が2層以上の基材樹脂フィルム層からなり、前記粘着剤層側に隣接する基材樹脂フィルム層2の融点が100〜120℃であり、該粘着剤層側の基材樹脂フィルム層と前記粘着剤層と逆側で隣接する基材樹脂フィルム層1の融点が140〜150℃である。
【選択図】図1