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1. JP2008544867 - MEMS素子の製造方法

Office
Japan
Application Number 2008519068
Application Date 27.06.2006
Publication Number 2008544867
Publication Date 11.12.2008
Publication Kind A
IPC
B81C 1/00
BPERFORMING OPERATIONS; TRANSPORTING
81MICROSTRUCTURAL TECHNOLOGY
CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
1Manufacture or treatment of devices or systems in or on a substrate
B81B 3/00
BPERFORMING OPERATIONS; TRANSPORTING
81MICROSTRUCTURAL TECHNOLOGY
BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
3Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
H04R 23/00
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
RLOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
23Transducers other than those covered by groups H04R9/-H04R21/99
H04R 31/00
HELECTRICITY
04ELECTRIC COMMUNICATION TECHNIQUE
RLOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
31Apparatus or processes specially adapted for the manufacture of transducers or diaphragms therefor
CPC
B81B 2203/0118
BPERFORMING OPERATIONS; TRANSPORTING
81MICROSTRUCTURAL TECHNOLOGY
BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
2203Basic microelectromechanical structures
01Suspended structures, i.e. structures allowing a movement
0118Cantilevers
B81B 2203/0315
BPERFORMING OPERATIONS; TRANSPORTING
81MICROSTRUCTURAL TECHNOLOGY
BMICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
2203Basic microelectromechanical structures
03Static structures
0315Cavities
B81C 1/00047
BPERFORMING OPERATIONS; TRANSPORTING
81MICROSTRUCTURAL TECHNOLOGY
CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
1Manufacture or treatment of devices or systems in or on a substrate
00015for manufacturing microsystems
00023without movable or flexible elements
00047Cavities
B81C 1/00182
BPERFORMING OPERATIONS; TRANSPORTING
81MICROSTRUCTURAL TECHNOLOGY
CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
1Manufacture or treatment of devices or systems in or on a substrate
00015for manufacturing microsystems
00134comprising flexible or deformable structures
00182Arrangements of deformable or non-deformable structures, e.g. membrane and cavity for use in a transducer
B81C 2201/0109
BPERFORMING OPERATIONS; TRANSPORTING
81MICROSTRUCTURAL TECHNOLOGY
CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
2201Manufacture or treatment of microstructural devices or systems
01in or on a substrate
0101Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
0102Surface micromachining
0105Sacrificial layer
0109Sacrificial layers not provided for in B81C2201/0107 - B81C2201/0108
B81C 1/00
BPERFORMING OPERATIONS; TRANSPORTING
81MICROSTRUCTURAL TECHNOLOGY
CPROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
1Manufacture or treatment of devices or systems in or on a substrate
Applicants コーニンクレッカ フィリップス エヌ ヴェ
Inventors デッケル,ロナルド
ランヘレイス,ヘールト
ポールマン,ハオケ
デュームリンク,マルティン
Agents 伊東 忠彦
大貫 進介
伊東 忠重
Priority Data 05105869.1 30.06.2005 EP
Title
(JA) MEMS素子の製造方法
Abstract
(JA)

デバイス(100)は、第一表面(1)とそれと反対側の第二表面(2)とを有する半導体材料から成る基板(10)、及び固定電極(52)と空洞(30)内にある可動電極(51)とを備えた微小電気機械システム(MEMS)素子(50)を有する。電極(51、52)の一方は基板(10)内に形作られている。可動電極(51)は、第1の離隔位置と第2の位置との間で固定電極(52)に対して近付いたり離れたりする方向に移動可能である。空洞(30)は、基板(10)の第二表面(2)で露出された基板(19)内の開口(18)によって開かれている。空洞(30)は、横方向で該空洞(30)を実質的に囲む基板(10)内の少なくとも1つのポスト(15)によって定められた高さを有する。