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1. JP2008539564 - 異なる環境での処理を可能とする基板処理プラットフォーム

Office
Japan
Application Number 2008507759
Application Date 14.04.2006
Publication Number 2008539564
Publication Date 13.11.2008
Publication Kind A
IPC
H01L 21/26
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
26Bombardment with wave or particle radiation
H01L 21/31
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
H01L 21/677
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components
677for conveying, e.g. between different work stations
CPC
H01L 21/67115
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67011Apparatus for manufacture or treatment
67098Apparatus for thermal treatment
67115mainly by radiation
H01L 21/67207
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
67005Apparatus not specifically provided for elsewhere
67011Apparatus for manufacture or treatment
67155Apparatus for manufacturing or treating in a plurality of work-stations
67207comprising a chamber adapted to a particular process
H01L 21/67778
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
677for conveying, e.g. between different workstations
67763the wafers being stored in a carrier, involving loading and unloading
67778involving loading and unloading of waers
H01L 21/00
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Applicants アプライド マテリアルズ インコーポレイテッド
Inventors 横田 好隆
モーリツ, カーク
マ, カイ
チャン, ウェン
パラシリス, アナスタンシオス
シャルマ, ロヒット
ティジャンドラ, アガス
アチュサラマン, ヴェンダプラム
ラママーシー, サンダー
サクール, ランディアー
Agents 長谷川 芳樹
山田 行一
池田 成人
Priority Data 11114250 25.04.2005 US
Title
(JA) 異なる環境での処理を可能とする基板処理プラットフォーム
Abstract
(JA)

半導体ウエハ処理システム(40)は、大気圧で動作し複数のウエハカセットを取り付ける工場インターフェース(26)を含み、更に、フレーム(16)に取り付けられ工場インターフェースにそれぞれのスリット弁を通して接続される複数のウエハ処理チャンバ(42、44)を含む。工場インターフェースにおけるロボットにより、カセットと処理チャンバとの間にウエハ(32)を移送することができる。処理チャンバのうちの少なくとも1つは、減圧状態で動作でき、フレームに取り付けられた真空ポンプ(46)によって排気される。その処理チャンバは、ウインドー(60)を通して処理空間(100)を照射するランプ(66)のアレイを含む急速熱処理チャンバ(52)であることができる。ランプヘッドは、処理空間の圧力とほぼ同じ圧力まで真空排気される。マルチステッププロセスは、異なる圧力で行うことができる。本発明は、また、スリット弁の外側に不活性ガスを流し込み(210)、開放されたスリット(206)の外側にガスカーテンを形成して毒性処理ガスの流出を阻止することができるようにする、熱処理チャンバのウエハアクセスポート(202)を含む。
【選択図】 図2


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