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1. JP2008538126 - パターン化された基板上にルテニウム金属層を形成する方法

Office Japan
Application Number 2008501891
Application Date 21.02.2006
Publication Number 2008538126
Publication Date 09.10.2008
Grant Number 4308314
Grant Date 15.05.2009
Publication Kind A5
IPC
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16Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
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18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
283Deposition of conductive or insulating materials for electrodes ; conducting electric current
285from a gas or vapour, e.g. condensation
28506of conductive layers
28512on semiconductor bodies comprising elements of Group IV of the Periodic System
28556by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
28562Selective deposition
Applicants 東京エレクトロン株式会社
ト-キョ-・エレクトロン・アメリカ・インコーポレーテッド
Inventors 松田 司
Agents 伊東 忠彦
Priority Data 10/907,022 16.03.2005 US
Title
(JA) パターン化された基板上にルテニウム金属層を形成する方法
Abstract
(JA)

ルテニウム金属層(560)を形成する方法は、成膜システム(1、100)の処理チャンバ(10、110)内に、パターン化された基板(25、125、500)を提供するステップであって、前記パターン化された基板(25、125、500)は、1もしくは2以上のビア、溝またはこれらの組み合わせを有するステップと、原子層成膜処理法で、前記基板(25、125、500)上に、第1のルテニウム金属層(540)を成膜するステップと、熱化学気相成膜処理法で、前記第1のルテニウム金属層(540)の上部に、第2のルテニウム金属層(550)を成膜するステップと、を有する。成膜されたルテニウム金属層(560)は、めっきの拡散バリア層、シード層、またはその両方に使用される。