JP2008517441 イオンビームを集束させるためのシステム及び方法

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Application Number 2007537924

Application Date 12.10.2005

Publication Number 2008517441

Publication Date 22.05.2008

Grant Number 5272242

Grant Date 24.05.2013

Publication Kind B2

IPC

CPC

Applicants アクセリス　テクノロジーズ　インコーポレーテッド

Inventors ベンベニステ　ビクター
ケラーマン　ピーター

Agents 萼　経夫
宮崎　嘉夫
舘石　光雄
小野塚　薫
田上　明夫
▲高▼　昌宏
中村　壽夫
加藤　勉

Priority Data 10967855 18.10.2004 US

Title

(JA) イオンビームを集束させるためのシステム及び方法

Abstract

(JA)

イオン注入機内の走査イオンビームを集束するためのシステム及び方法が提供される。ビーム集束システムは、第１、第２磁石を備え、該第１、第２磁石は、協働して、走査方向に沿って走査イオンビームの時間的に変化するビーム位置ニ対応する時間的に変化する集束フィールド中心を有する磁気的な集束フィールドを与える。この方法は、走査平面内に集束フィールド中心を有する集束フィールドを与える工程と、集束フィールド中心が、走査方向に沿って走査イオンビームの時間的に変化するビーム位置にほぼ一致するように集束フィールドを動的に調整する工程とを含んでいる。

H	ELECTRICITY
01	BASIC ELECTRIC ELEMENTS
J	ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37	Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
30	Electron-beam or ion-beam tubes for localised treatment of objects
317	for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation

H	ELECTRICITY
01	BASIC ELECTRIC ELEMENTS
L	SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21	Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02	Manufacture or treatment of semiconductor devices or of parts thereof
04	the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18	the devices having semiconductor bodies comprising elements of group IV of the Periodic System or A_IIIB_V compounds with or without impurities, e.g. doping materials
26	Bombardment with wave or particle radiation
263	with high-energy radiation
265	producing ion implantation

H	ELECTRICITY
01	BASIC ELECTRIC ELEMENTS
J	ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37	Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
30	Electron-beam or ion-beam tubes for localised treatment of objects
317	for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation

H	ELECTRICITY
01	BASIC ELECTRIC ELEMENTS
L	SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21	Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02	Manufacture or treatment of semiconductor devices or of parts thereof
04	the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18	the devices having semiconductor bodies comprising elements of group IV of the Periodic System or A_IIIB_V compounds with or without impurities, e.g. doping materials
26	Bombardment with wave or particle radiation
263	with high-energy radiation
265	producing ion implantation

H	ELECTRICITY
01	BASIC ELECTRIC ELEMENTS
J	ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37	Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
02	Details
04	Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
147	Arrangements for directing or deflecting the discharge along a desired path

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1. JP2008517441 - イオンビームを集束させるためのシステム及び方法