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1. JP2008003540 - POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD

Office Japan
Application Number 2006244293
Application Date 08.09.2006
Publication Number 2008003540
Publication Date 10.01.2008
Grant Number 4808574
Grant Date 26.08.2011
Publication Kind B2
IPC
G03F 7/039
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
039Macromolecular compounds which are photodegradable, e.g. positive electron resists
C08F 220/28
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
220Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride, ester, amide, imide, or nitrile thereof
02Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
10Esters
26Esters containing oxygen in addition to the carboxy oxygen
28containing no aromatic rings in the alcohol moiety
H01L 21/027
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
027Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L21/18 or H01L21/34165
CPC
G03F 7/0397
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
039Macromolecular compounds which are photodegradable, e.g. positive electron resists
0392the macromolecular compound being present in a chemically amplified positive photoresist composition
0397the macromolecular compound having an alicyclic moiety in a side chain
G03F 7/0045
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
004Photosensitive materials
0045with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
Y10S 430/111
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
10TECHNICAL SUBJECTS COVERED BY FORMER USPC
STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
430Radiation imagery chemistry: process, composition, or product thereof
1053Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
1055Radiation sensitive composition or product or process of making
106Binder containing
111Polymer of unsaturated acid or ester
Applicants TOKYO OHKA KOGYO CO LTD
東京応化工業株式会社
Inventors TAKESHITA MASARU
竹下 優
WATABE RYOJI
渡部 良司
Agents 棚井 澄雄
志賀 正武
青山 正和
鈴木 三義
柳井 則子
Priority Data 2006145285 25.05.2006 JP
Title
(EN) POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD
(JA) ポジ型レジスト組成物、レジストパターン形成方法および樹脂
Abstract
(EN)

PROBLEM TO BE SOLVED: To provide a positive resist composition excellent in solubility in an organic solvent and capable of forming a resist pattern of good profile, and a resist pattern forming method.

SOLUTION: The positive resist composition comprises a resin component (A) the alkali solubility of which increases by the action of an acid and an acid generator component (B) which generates an acid upon exposure to light, wherein the resin component (A) has a constitutional unit (a0-1) represented by formula (a0-1) and a constitutional unit (a0-2) represented by formula (a0-2), wherein R is H, halogen, a lower alkyl group or a lower haloalkyl group; Y1 and Y3 are each an alicyclic group; and Z is a tertiary alkyl group-containing group or an alkoxyalkyl group.

COPYRIGHT: (C)2008,JPO&INPIT

(JA)

【課題】有機溶剤への溶解性に優れ、かつ良好な形状のレジストパターンを形成できるポジ型レジスト組成物およびレジストパターン形成方法を提供する。
【解決手段】酸の作用によりアルカリ可溶性が増大する樹脂成分(A)と、露光により酸を発生する酸発生剤成分(B)とを含有するポジ型レジスト組成物であって、前記樹脂成分(A)が、下記一般式(a0−1)で表される構成単位(a0−1)と、下記一般式(a0−2)で表される構成単位(a0−2)とを有することを特徴とするポジ型レジスト組成物[Rは水素原子、ハロゲン原子、低級アルキル基またはハロゲン化低級アルキル基;Y、Yは脂肪族環式基;Zは第3級アルキル基含有基またはアルコキシアルキル基]。

【選択図】なし