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1. JP2001308342 - METHOD OF MANUFACTURING THIN FILM TRANSISTOR AND LIQUID CRYSTAL DISPLAY DEVICE

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Japan
Application Number 2001039039
Application Date 15.02.2001
Publication Number 2001308342
Publication Date 02.11.2001
Publication Kind A
IPC
H01L 29/786
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
786Thin-film transistors
H01L 21/336
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
334Multistep processes for the manufacture of devices of the unipolar type
335Field-effect transistors
336with an insulated gate
G02F 1/1368
GPHYSICS
02OPTICS
FDEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH IS MODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THE DEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY, COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g. SWITCHING, GATING, MODULATING OR DEMODULATING; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
1Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
01for the control of the intensity, phase, polarisation or colour
13based on liquid crystals, e.g. single liquid crystal display cells
133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
1362Active matrix addressed cells
1368in which the switching element is a three-electrode device
H01L 21/266
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
26Bombardment with wave or particle radiation
263with high-energy radiation
265producing ion implantation
266using masks
H01L 21/316
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
314Inorganic layers
316composed of oxides or glassy oxides or oxide-based glass
Applicants MATSUSHITA ELECTRIC IND CO LTD
株式会社ジャパンディスプレイセントラル
Inventors IKUTA SHIGEO
生田　茂雄
Agents 鈴江　武彦
河野　哲
中村　誠
蔵田　昌俊
峰　隆司
福原　淑弘
村松　貞男
橋本　良郎
Priority Data 2000036121 15.02.2000 JP
Title
(EN) METHOD OF MANUFACTURING THIN FILM TRANSISTOR AND LIQUID CRYSTAL DISPLAY DEVICE
(JA) 薄膜トランジスタの製造方法および液晶表示装置
front page image
Abstract
(EN)

PROBLEM TO BE SOLVED: To prevent deterioration of characteristics of a thin film transistor using a polycrystalline silicon film caused by exposure to a resist removing solution in a resist removing step.

SOLUTION: An ozone-contained water is brought into contact with the surface of a polycrystalline silicon film 2 to form a surface oxide layer 3 thereon, a predetermined pattern of the mask 4 is formed on the polysilicon film 2 directly or via another film, etching or impurity ion implantation is carried out using the mask 4 to remove the mask 4 under a condition that the surface oxide layer 3 is formed on a surface of the at least exposed polysilicon film 2, thereby obtaining a thin film transistor excellent in characteristics and reliability.

COPYRIGHT: (C)2001,JPO


(JA)


【課題】 レジスト剥離工程において多結晶シリコン膜
が剥離液に晒されてしまうと、この膜を用いて形成する
薄膜トランジスタの特性が劣化する。


【解決手段】 多結晶シリコン膜２の表面にオゾン含有
水を接触させてこの表面に表面酸化層３を形成し、多結
晶シリコン膜２上に、直接または他の膜を介して、所定
パターンのマスク４を形成し、このマスク４を用いてエ
ッチングまたは不純物イオンの注入を行い、少なくとも
露出した多結晶シリコン膜２の表面に表面酸化層３が形
成されている状態でマスク４を除去する。
こうして、特
性および信頼性に優れた薄膜トランジスタを得る。


Related patent documents
CN1401142
WO/2001/061760
US20030003616
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