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1. JPWO1997023906 - 半導体記憶装置およびその製造方法

Office
Japan
Application Number 1997523512
Application Date 26.12.1996
Publication Number WO1997023906
Publication Date 03.07.1997
Publication Kind A
IPC
H01L 21/8244
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822the substrate being a semiconductor, using silicon technology
8232Field-effect technology
8234MIS technology
8239Memory structures
8244Static random access memory structures (SRAM)
H01L 27/11
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
11Static random access memory structures
Applicants 日本鋼管株式会社
Inventors 梅木 三十四
稲田 暢文
大松 将彦
Agents 花輪 義男
長谷川 和音
Priority Data 1995338748 26.12.1995 JP
1996020058 06.02.1996 JP
1996020059 06.02.1996 JP
Title
(JA) 半導体記憶装置およびその製造方法
Abstract
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