Processing

Please wait...

Settings

Settings

Goto Application

1. JP1998501923 - 半導体ダイオードレーザのような光電半導体装置を製造する方法

Office Japan
Application Number 1996531582
Application Date 18.03.1996
Publication Number 1998501923
Publication Date 17.02.1998
Publication Kind A
IPC
H01J 3/18
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
3Details of electron-optical or ion-optical arrangements or of ion traps common to two or more basic types of discharge tubes or lamps
14Arrangements for focusing or reflecting ray or beam
18Electrostatic lenses
CPC
H01S 5/164
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
10Construction or shape of the optical resonator ; , e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
16Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
164with window regions comprising semiconductor material with a wider bandgap than the active layer
H01S 5/2081
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
20Structure or shape of the semiconductor body to guide the optical wave ; ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
2054Methods of obtaining the confinement
2081using special etching techniques
H01S 5/2275
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
20Structure or shape of the semiconductor body to guide the optical wave ; ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
22having a ridge or stripe structure
227Buried mesa structure ; ; Striped active layer
2275mesa created by etching
H01S 5/50
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
50Amplifier structures not provided for in groups H01S5/02 - H01S5/30
H01S 2304/04
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
2304Special growth methods for semiconductor lasers
04MOCVD or MOVPE
Applicants
Inventors ファン ロイヤン レイモンド
タイス ペトラス ヨハネス アドリアヌス
ファン ゲステル パトリック ヘンリカス
Agents 沢田 雅男
Priority Data 95200986.8 19.04.1995 NL
Title
(JA) 半導体ダイオードレーザのような光電半導体装置を製造する方法
Abstract
Also published as