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1. (JP2008544562) 半導体デバイス及びその製造方法

Office : Japan
Application Number: 2008519026 Application Date: 20.06.2006
Publication Number: 2008544562 Publication Date: 04.12.2008
Publication Kind : A
IPC:
H01L 29/732
H01L 21/331
H01L 29/737
H01L 21/8222
H01L 21/8248
H01L 27/06
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
70
Bipolar devices
72
Transistor-type devices, i.e. able to continuously respond to applied control signals
73
Bipolar junction transistors
732
Vertical transistors
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
328
Multistep processes for the manufacture of devices of the bipolar type, e.g. diodes, transistors, thyristors
33
the devices comprising three or more electrodes
331
Transistors
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
70
Bipolar devices
72
Transistor-type devices, i.e. able to continuously respond to applied control signals
73
Bipolar junction transistors
737
Hetero-junction transistors
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78
with subsequent division of the substrate into plural individual devices
82
to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822
the substrate being a semiconductor, using silicon technology
8222
Bipolar technology
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77
Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78
with subsequent division of the substrate into plural individual devices
82
to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822
the substrate being a semiconductor, using silicon technology
8248
Combination of bipolar and field-effect technology
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04
the substrate being a semiconductor body
06
including a plurality of individual components in a non-repetitive configuration
CPC:
H01L 29/66287
H01L 29/1004
H01L 29/66242
H01L 29/732
H01L 29/7378
Applicants: エヌエックスピー ビー ヴィ
Inventors: エルウィン ヘイツェン
ジュースト メライ
フランソワ ヌイリ
Agents: 杉村 憲司
杉村 興作
来間 清志
藤谷 史朗
澤田 達也
Priority Data: 05105716.4 27.06.2005 EP
Title: (JA) 半導体デバイス及びその製造方法
Abstract: front page image
(JA)

本発明は、エミッター領域(1)と、ベース領域(2)と、第一、第二及び第三の接続導体を具えるコレクタ領域(3)とを有するバイポーラトランジスタを具える半導体本体(11)及び基板(11)を有する半導体デバイスであって、エミッター領域(1)は、スペーサ(4)を設けたメサ形のエミッター接続領域(1A)と、それに隣接し多結晶シリコンからなる一の導電領域(2AA)をもつベース接続領域(2A)とを具える。本発明に従うデバイス(10)において、ベース接続領域(2A)は、他の導電領域(2AB)を有し、多結晶シリコンからなる一の導電領域(2AA)とベース領域(2)との間に位置決めされ、多結晶シリコンからなる一の導電領域(2AA)の選択エッチングが可能な材料で構成される。このようなデバイス(10)は、本発明に従う方法によって製造することが容易であり、そのバイポーラトランジスタは優れたRF性質を具備する。


Also published as:
EP1900034US20090200577CN101208802WO/2007/000683