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1. (JP6282260) 微粒子汚染測定方法及び装置

Office : Japan
Application Number: 2015502369 Application Date: 28.03.2013
Publication Number: 6282260 Publication Date: 02.02.2018
Grant Number: 6282260 Grant Date: 02.02.2018
Publication Kind : B2
IPC:
H01L 21/027
G01N 1/02
G03F 7/20
G01T 1/169
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
027
Making masks on semiconductor bodies for further photolithographic processing, not provided for in group H01L21/18 or H01L21/34165
G PHYSICS
01
MEASURING; TESTING
N
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
1
Sampling; Preparing specimens for investigation
02
Devices for withdrawing samples
G PHYSICS
03
PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
F
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7
Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20
Exposure; Apparatus therefor
G PHYSICS
01
MEASURING; TESTING
T
MEASUREMENT OF NUCLEAR OR X-RADIATION
1
Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
16
Measuring radiation intensity
169
Exploration, location of contaminated surface areas
Applicants: エーエスエムエル ネザーランズ ビー.ブイ.
ティー・エヌ・オー
Inventors: デ ヨング,アンソニウス
ヴァン デル ドンク,ジェイクス
Agents: 稲葉 良幸
大貫 敏史
Priority Data: 61/619,209 02.04.2012 US
Title: (JA) 微粒子汚染測定方法及び装置
Abstract:
Also published as:
EP2834709US20150055127KR1020150013483CN104204954JP2015517101WO/2013/149961