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1. IN201817035191 - FIELD EFFECT TRANSISTOR, DISPLAY ELEMENT, IMAGE DISPLAY DEVICE, AND SYSTEM

Office
India
Application Number 201817035191
Application Date 18.09.2018
Publication Number 201817035191
Publication Date 04.01.2019
Publication Kind A
IPC
H01L 29/786
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66Types of semiconductor device
68controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76Unipolar devices
772Field-effect transistors
78with field effect produced by an insulated gate
786Thin-film transistors
Applicants RICOH COMPANY, LTD.
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Inventors UEDA, Naoyuki
NAKAMURA, Yuki
ABE, Yukiko
MATSUMOTO, Shinji
SONE, Yuji
SAOTOME, Ryoichi
ARAE, Sadanori
KUSAYANAGI, Minehide
Priority Data 2016-055571 18.03.2016 JP
2016-157920 10.08.2016 JP
Title
(EN) FIELD EFFECT TRANSISTOR, DISPLAY ELEMENT, IMAGE DISPLAY DEVICE, AND SYSTEM
Abstract
(EN) A field effect transistor has: a gate electrode for applying a gate voltage; a source electrode and a drain electrode for transmitting electrical signals; an active layer formed between the source electrode and the drain electrode; and a gate insulating layer formed between the gate electrode and the active layer, the field effect transistor being characterized in that the active layer includes at least two types of oxide layer, an A layer and a B layer; and the active layer satisfies condition (1) and/or (2) noted below. Condition (1): The active layer is composed of three or more oxide layers, including two or more of the A layer. Condition (2): The bandgap of the A layer is smaller than the bandgap of the B layer, and the oxygen affinity of the A layer is equal to or greater than the oxygen affinity of the B layer.