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1. IN3739/DELNP/2013 - METHOD FOR MANUFACTURING SOLAR CELLS ATTENUATING THE LID PHENOMENA

Office India
Application Number 3739/DELNP/2013
Application Date 29.04.2013
Publication Number 3739/DELNP/2013
Publication Date 21.11.2014
Publication Kind A
IPC
H01L 31/18
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
H01L 31/04
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04adapted as photovoltaic conversion devices
H01L 21/322
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
322to modify their internal properties, e.g. to produce internal imperfections
Applicants COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
Inventors POCHET Pascal
DUBOIS S├ębastien
Priority Data 1058997 02.11.2010 FR
Title
(EN) METHOD FOR MANUFACTURING SOLAR CELLS ATTENUATING THE LID PHENOMENA
Abstract
(EN)
To reduce the degradation in the conversion efficiency of crystalline silicon solar cells due to the LID effect one or more steps consisting of the controlled introduction of gaps into the silicon are applied wherein said introduction is carried out by means of one or more steps selected from the following steps: silicidation nitridation ion implantation laser irradiation the application of mechanical stresses to a surface of the silicon substrate by bending in combination with a temperature that promotes the formation of gaps. Said gaps make it possible to reduce the interstitial oxygen content by means of an effect of the diffusion of the VO complexes and the precipitation of the oxygen. The introduction of the gaps also has the effect of reducing the self interstitial content and thus of limiting the formation of interstitial boron. The LID phenomena caused by the activation of the BiOi2 complexes are thus limited. The invention can be used particularly in monocrystalline or polycrystalline silicon solar cells having a high boron and oxygen concentration.