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1. IN592/KOLNP/2008 - COMBINED ETCHING AND DOPING MEDIA FOR SILICON DIOXIDE LAYERS AND UNDERLYING SILICON

Office India
Application Number 592/KOLNP/2008
Application Date 08.02.2008
Publication Number 592/KOLNP/2008
Publication Date 14.11.2008
Publication Kind A
IPC
C CHEMISTRY; METALLURGY
03
GLASS; MINERAL OR SLAG WOOL
C
CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
15
Surface treatment of glass, not in the form of fibres or filaments, by etching
C03C 15/00
Applicants MERCK PATENT GMBH
Inventors KUEBELBECK, ARMIN
STOCKUM, WERNER
Priority Data 102005032807.5 12.07.2005 DE
Title
(EN) COMBINED ETCHING AND DOPING MEDIA FOR SILICON DIOXIDE LAYERS AND UNDERLYING SILICON
Abstract
(EN)
The present invention relates firstly to HF/fluoride-free etching and doping media which are suitable both forthe etching of silicon dioxide layers and also forthe doping of underlying silicon layers. The presentinvention also relates secondly to a process in whichthese media are employed.

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