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1. (GB2215129) METHOD OF FABRICATING SEMICONDUCTOR DEVICES SUCH AS SOLAR CELLS WITH ANTI-REFLECTING COATING

Office : United Kingdom
Application Number: 8903852 Application Date: 21.02.1989
Publication Number: 2215129 Publication Date: 24.05.1989
Publication Kind : B
IPC:
H01L 31/04
H01L 31/0216
H01L 31/0224
H01L 31/18
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
04
adapted as conversion devices
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
Details
0216
Coatings
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02
Details
0224
Electrodes
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31
Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18
Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
CPC:
H01L 31/02168
H01L 31/022425
H01L 31/1804
Y02E 10/547
Y02P 70/521
Applicants: MOBIL SOLAR ENERGY CORP
Inventors: CHAUDHURI ARUP R
RAVI KRAMADHATI VENKATA
Priority Data: 8701622 07.07.1987 US
Title: (EN) METHOD OF FABRICATING SEMICONDUCTOR DEVICES SUCH AS SOLAR CELLS WITH ANTI-REFLECTING COATING
Abstract:
(EN) A process of manufacturing silicon solar cells is described which is characterized by forming on the front surface of a silicon substrate a polysilazane coating by (a) first subjecting the substrate to an ammonia plasma treatment for a predetermined period of time so as to produce hydrogen implantation and (b) subjecting the substrate to a silane and ammonia plasma treatment to obtain additional hydrogen implantation and formation of a polysilazane coating. The polysilazane coating is etched to form a grid electrode pattern, and subsequently the exposed silicon on the front side of the substrate is coated with an adherent coating of a highly conductive metal so as to form a grid electrode. An aluminum coating is applied to the rear side of the substrate so as to form a back electrode. The aluminum coating is heated so as to alloy with the silicon substrate and thereby form an ohmic contact. The ammonia plasma treatment has the effect of enhancing the conversion efficiency of the solar cell by virtue of diffusion of hydrogen into the substrate. The heat treatment for alloying the aluminum tends to cause the implanted hydrogen to diffuse further into the substrate, thereby beneficially altering the bulk diffusion length characteristics of the substrate so as to decrease recombination of the minority carriers produced in response to the incident light.
Also published as:
EP0325606DE000003790981KR1019890702258AU1987080382WO/1989/000341