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1. FR3112422 - Procédé de réalisation d’une couche diélectrique sur une structure en matériaux III-V

Office
France
Application Number 2007279
Application Date 09.07.2020
Publication Number 3112422
Publication Date 14.01.2022
Publication Kind A1
IPC
H01L 21/316
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
314Inorganic layers
316composed of oxides or glassy oxides or oxide-based glass
CPC
H01L 21/02178
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02109characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
02112characterised by the material of the layer
02172the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
02175characterised by the metal
02178the material containing aluminium, e.g. Al2O3
H01L 21/022
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02109characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
022the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
H01L 21/02274
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02225characterised by the process for the formation of the insulating layer
0226formation by a deposition process
02263deposition from the gas or vapour phase
02271deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
02274in the presence of a plasma [PECVD]
H01L 21/0228
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02225characterised by the process for the formation of the insulating layer
0226formation by a deposition process
02263deposition from the gas or vapour phase
02271deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
0228deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
H01L 29/94
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
66Types of semiconductor device ; ; Multistep manufacturing processes therefor
86controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
92Capacitors with potential-jump barrier or surface barrier
94Metal-insulator-semiconductors, e.g. MOS
H01L 29/513
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor
40Electrodes ; ; Multistep manufacturing processes therefor
43characterised by the materials of which they are formed
49Metal-insulator-semiconductor electrodes, ; e.g. gates of MOSFET
51Insulating materials associated therewith
511with a compositional variation, e.g. multilayer structures
513the variation being perpendicular to the channel plane
Applicants COMMISSARIAT ENERGIE ATOMIQUE
CENTRE NAT RECH SCIENT
UNIV GRENOBLE ALPES
Inventors LEGALLAIS MAXIME
SALEM BASSEM
BARON THIERRY
GWOZIECKI ROMAIN
PLISSONNIER MARC
Priority Data 2007279 09.07.2020 FR
Title
(FR) Procédé de réalisation d’une couche diélectrique sur une structure en matériaux III-V
Abstract
(FR) Titre : Procédé de réalisation d’une couche diélectrique sur une structure à base de matériaux III-V L’invention concerne un procédé de réalisation, sur une structure (70) à base d’un matériau III-V, d’une couche diélectrique (71), le procédé comprenant les séquences suivantes effectuées: réaliser un premier film diélectrique (71A) par ALD en effectuant une pluralité de premiers cycles (1A) comprenant chacun au moins: une injection (10A) dans la chambre de réaction (210) d’un précurseur à base d’un premier matériau, une injection (30A) dans la chambre de réaction (210) d’un précurseur à base d’eau (H2O) ou d’ozone (O3), réaliser, sur le premier film diélectrique (71A), un deuxième film diélectrique (71B) par ALD assisté par plasma en effectuant une pluralité de deuxièmes cycles (1B) comprenant chacun au moins: une injection (10B) dans la chambre de réaction (210) d’un précurseur à base d’un deuxième matériau, une injection (30B) dans la chambre de réaction (210) d’un précurseur à base d’oxygène (O) ou d’azote (N). Figure pour l’abrégé : Fig.2
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