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1. EP2454760 - STRAIN-BALANCED EXTENDED-WAVELENGTH BARRIER PHOTODETECTOR

Office European Patent Office
Application Number 10735136
Application Date 15.07.2010
Publication Number 2454760
Publication Date 23.05.2012
Publication Kind A2
IPC
H01L 31/101
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08in which radiation controls flow of current through the device, e.g. photoresistors
10characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
101Devices sensitive to infra-red, visible or ultra-violet radiation
H01L 27/146
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
H01L 31/0352
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
0248characterised by their semiconductor bodies
0352characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
H01L 31/102
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08in which radiation controls flow of current through the device, e.g. photoresistors
10characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
101Devices sensitive to infra-red, visible or ultra-violet radiation
102characterised by only one potential barrier or surface barrier
CPC
H01L 31/035236
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
0248characterised by their semiconductor bodies
0352characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
035236Superlattices; Multiple quantum well structures
B82Y 20/00
BPERFORMING OPERATIONS; TRANSPORTING
82NANOTECHNOLOGY
YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
20Nanooptics, e.g. quantum optics or photonic crystals
H01L 27/142
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
142Energy conversion devices
H01L 27/14649
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144Devices controlled by radiation
146Imager structures
14643Photodiode arrays; MOS imagers
14649Infra-red imagers
H01L 31/0232
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0232Optical elements or arrangements associated with the device
H01L 31/0304
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus peculiar to the manufacture or treatment thereof or of parts thereof; Details thereof
0248characterised by their semiconductor bodies
0256characterised by the material
0264Inorganic materials
0304including, apart from doping materials or other impurities, only AIIIBV compounds
Applicants LOCKHEED CORP
Inventors SCOTT JEFF
PALOCZI GEORGE
Priority Data 2010042168 15.07.2010 US
21381609 17.07.2009 US
Title
(DE) BELASTUNGSKOMPENSIERTER BARRIEREFOTODETEKTOR MIT ERWEITERTER WELLENLÄNGE
(EN) STRAIN-BALANCED EXTENDED-WAVELENGTH BARRIER PHOTODETECTOR
(FR) PHOTODÉTECTEUR À DÉFORMATION COMPENSÉE ET À BARRIÈRE DE LONGUEUR DONDE PLUS ÉLOIGNÉE
Abstract
(EN)
A strain-balanced photodetector is provided for detecting infrared light at an extended cutoff wavelength in the range of 4.5 µm or more. An InAsSb absorber layer has an Sb content is grown in a lattice-mismatched condition to a GaSb substrate, and a plurality of GaAs strain-compensating layers are interspersed within the absorber layer to balance the strain of the absorber layer due to the lattice mismatch. The strain-compensation layers allow the absorber to achieve a thickness exhibiting sufficient absorption efficiency while extending the cutoff wavelength beyond that possible in a lattice-matched state. Additionally, the strain-compensation layers are sufficiently thin to be substantially quantum-mechanically transparent such that they do not substantially affect the transmission efficiency of the absorber. The photodetector is preferably formed as a majority carrier filter photodetector exhibiting minimal dark current, and may be provided individually or in a focal plane array.

(FR)
L'invention concerne un photodétecteur à déformation compensée permettant la détection d'une lumière infrarouge à une longueur d'onde seuil plus éloignée supérieure ou égale à 4,5 ?m. Une couche d'absorbeur à base d'InAsSb contenant du Sb est formée dans des conditions de désaccord de réseaux sur un substrat en GaSb et une pluralité de couches en GaAs compensatrices de déformation est intercalée dans la couche d'absorbeur pour compenser la déformation de la couche d'absorbeur due au désaccord de réseaux. Les couches compensatrices de déformation permettent à l'absorbeur d'avoir une épaisseur ayant une efficacité d'absorption suffisante tout en repoussant la longueur d'onde seuil au-delà de ce qui est possible dans un état de désaccord de réseaux. En outre, les couches compensatrices de déformation sont suffisamment fines pour être sensiblement transparentes sur le plan de la mécanique quantique, de sorte qu'elles n'affectent pratiquement pas l'efficacité de transmission de l'absorbeur. Le photodétecteur prend de préférence la forme d'un photodétecteur à filtre de porteur de charge majoritaire présentant un courant d'obscurité minimal, et peut être utilisé individuellement ou dans un réseau de plan focal.

Also published as
IL217596