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1. EP3982421 - METHOD FOR LOCAL MODIFICATION OF ETCHING RESISTANCE IN A SILICON LAYER, USE OF THIS METHOD IN THE PRODUCTION OF PASSIVATING CONTACT SOLAR CELLS AND THUS-CREATED SOLAR CELL

Office
European Patent Office
Application Number 20201147
Application Date 09.10.2020
Publication Number 3982421
Publication Date 13.04.2022
Publication Kind A1
IPC
H01L 31/0224
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0224Electrodes
H01L 31/18
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength, or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
CPC
H01L 31/022425
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
0224Electrodes
022408for devices characterised by at least one potential jump barrier or surface barrier
022425for solar cells
H01L 31/1804
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
1804comprising only elements of Group IV of the Periodic System
H01L 31/1864
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
186Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
1864Annealing
H01L 31/1872
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
186Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
1872Recrystallisation
H01L 31/1868
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
31Semiconductor devices sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
186Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
1868Passivation
Applicants INTERNATIONAL SOLAR ENERGY RES CENTER KONSTANZ E V
Inventors DR BUCHHOLZ FLORIAN
DR HOSS JAN
DR CHU HAIFENG
LOSSEN JAN
DR MIHAILETCHI VALENTIN DAN
Designated States
Priority Data 20201147 09.10.2020 EP
Title
(DE) VERFAHREN ZUR LOKALEN MODIFIKATION DER ÄTZBESTÄNDIGKEIT IN EINER SILIZIUMSCHICHT, ANWENDUNG DIESES VERFAHRENS BEI DER HERSTELLUNG VON PASSIVIERENDEN KONTAKTSOLARZELLEN UND SO HERGESTELLTE SOLARZELLE
(EN) METHOD FOR LOCAL MODIFICATION OF ETCHING RESISTANCE IN A SILICON LAYER, USE OF THIS METHOD IN THE PRODUCTION OF PASSIVATING CONTACT SOLAR CELLS AND THUS-CREATED SOLAR CELL
(FR) PROCÉDÉ DE MODIFICATION LOCALE DE LA RÉSISTANCE À LA GRAVURE DANS UNE COUCHE DE SILICIUM, UTILISATION DE CE PROCÉDÉ POUR LA PRODUCTION DE CELLULES SOLAIRES À CONTACT DE PASSIVATION ET CELLULE SOLAIRE AINSI CRÉÉE
Abstract
(EN) Provided are a method for local structuring of a silicon layer, which method comprises a step of local modification of the etching resistance within said silicon layer and a subsequent step of removing unmodified regions of said silicon layer by etching and applications of this method for the production of solar cells.
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