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1. EP3827354 - SYSTEM FOR IMPLEMENTING SHARED LOCK FREE MEMORY IMPLEMENTING COMPOSITE ASSIGNMENT

Office
European Patent Office
Application Number 19842058
Application Date 24.07.2019
Publication Number 3827354
Publication Date 02.06.2021
Publication Kind A1
IPC
G06F 13/16
GPHYSICS
06COMPUTING; CALCULATING OR COUNTING
FELECTRIC DIGITAL DATA PROCESSING
13Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
14Handling requests for interconnection or transfer
16for access to memory bus
G11C 13/00
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
13Digital stores characterised by the use of storage elements not covered by groups G11C11/, G11C23/, or G11C25/173
H01L 27/108
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
108Dynamic random access memory structures
CPC
G11C 7/1006
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
7Arrangements for writing information into, or reading information out from, a digital store
10Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
1006Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor
G11C 11/4096
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
21using electric elements
34using semiconductor devices
40using transistors
401forming cells needing refreshing or charge regeneration, i.e. dynamic cells
4063Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
407for memory cells of the field-effect type
409Read-write [R-W] circuits 
4096Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches 
G11C 7/1012
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
7Arrangements for writing information into, or reading information out from, a digital store
10Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
1006Data managing, e.g. manipulating data before writing or reading out, data bus switches or control circuits therefor
1012Data reordering during input/output, e.g. crossbars, layers of multiplexers, shifting or rotating
G11C 11/4093
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
21using electric elements
34using semiconductor devices
40using transistors
401forming cells needing refreshing or charge regeneration, i.e. dynamic cells
4063Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
407for memory cells of the field-effect type
409Read-write [R-W] circuits 
4093Input/output [I/O] data interface arrangements, e.g. data buffers
G11C 11/4076
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
21using electric elements
34using semiconductor devices
40using transistors
401forming cells needing refreshing or charge regeneration, i.e. dynamic cells
4063Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
407for memory cells of the field-effect type
4076Timing circuits
H01L 27/10897
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
108Dynamic random access memory structures
10897Peripheral structures
Applicants JERUSALEM COLLEGE OF TECH
Inventors MIZRAHI SHIMON
YEHEZKAEL RAPHAEL BERAKHAEL
ATTIA RUBEN
LAX EREZ
BERLOWITZ DEVORA
GOLDSTEIN MOSHE
DAYAN DAVID
Designated States
Priority Data 201862702373 24.07.2018 US
Title
(DE) SYSTEM ZUR IMPLEMENTIERUNG EINES GEMEINSAMEN BLOCKIERUNGSFREIEN SPEICHERS ZUR IMPLEMENTIERUNG EINER ZUSAMMENGESETZTEN ZUWEISUNG
(EN) SYSTEM FOR IMPLEMENTING SHARED LOCK FREE MEMORY IMPLEMENTING COMPOSITE ASSIGNMENT
(FR) SYSTÈME DE MISE EN OEUVRE D'UNE MÉMOIRE PARTAGÉE SANS VERROUILLAGE METTANT EN OEUVRE UNE ATTRIBUTION COMPOSITE
Abstract
(EN) It is an object of the disclosed technique to provide a novel method and system for shared concurrent access to a memory cell. In accordance with the disclosed technique, there is thus provided a system for shared concurrent access to a memory cell, which includes at least one shared memory cell, an evaluator and a plurality of processing agents coupled to the input of the evaluator. The evaluator is further coupled with the at least one memory cell. The evaluator is configured to evaluate an expression for performing multiple concurrent composite assignments on the at least one shared memory cell. The evaluator further allows each of the plurality of processing agents to perform concurrent composite assignments on the at least one shared memory cell. The composite assignments do not include a read operation of the at least one shared memory cell by the plurality of processing agents.
(FR) La présente invention vise à fournir un nouveau procédé et un système d'accès simultané partagé à une cellule de mémoire. La présente invention concerne un système d'accès simultané partagé à une cellule de mémoire, lequel comprend au moins une cellule de mémoire partagée, un évaluateur et une pluralité d'agents de traitement couplés à l'entrée de l'évaluateur. L'évaluateur est en outre couplé à ladite au moins une cellule de mémoire. L'évaluateur est conçu pour évaluer une expression pour réaliser de multiples attributions composites simultanées sur ladite au moins une cellule de mémoire partagée. L'évaluateur permet en outre à l'agent de traitement respectif de la pluralité d'agents de traitement d'effectuer des attributions composites simultanées sur ladite au moins une cellule de mémoire partagée. Les attributions composites ne comprennent pas d'opération de lecture de ladite au moins une cellule de mémoire partagée par la pluralité d'agents de traitement.
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