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1. EP3734644 - CONTROL METHOD FOR RECOMBINATION LIFETIMES

Office
European Patent Office
Application Number 18895298
Application Date 10.12.2018
Publication Number 3734644
Publication Date 04.11.2020
Publication Kind A4
IPC
H01L 21/263
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
26Bombardment with wave or particle radiation
263with high-energy radiation
H01L 21/223
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
22Diffusion of impurity materials, e.g. doping materials, electrode materials, into, or out of, a semiconductor body, or between semiconductor regions; Redistribution of impurity materials, e.g. without introduction or removal of further dopant
223using diffusion into, or out of, a solid from or into a gaseous phase
CPC
C30B 13/00
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
13Single-crystal growth by zone-melting; Refining by zone-melting
C30B 29/06
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
02Elements
06Silicon
C30B 33/02
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
33After-treatment of single crystals or homogeneous polycrystalline material with defined structure
02Heat treatment
C30B 33/04
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
33After-treatment of single crystals or homogeneous polycrystalline material with defined structure
04using electric or magnetic fields or particle radiation
H01L 21/223
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; ; Interactions between two or more impurities; Redistribution of impurities
223using diffusion into or out of a solid from or into a gaseous phase
H01L 21/263
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
18the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
26Bombardment with radiation
263with high-energy radiation
Applicants SHINETSU HANDOTAI KK
Inventors TAKENO HIROSHI
Designated States
Priority Data 2017254431 28.12.2017 JP
Title
(DE) STEUERUNGSVERFAHREN FÜR REKOMBINATIONSLEBENSDAUERN
(EN) CONTROL METHOD FOR RECOMBINATION LIFETIMES
(FR) PROCÉDÉ DE COMMANDE POUR DURÉES DE VIE DE RECOMBINAISON
Abstract
(EN) The present invention is a method for controlling recombination lifetime for controlling recombination lifetime of carriers in a silicon single crystal substrate by performing: a preparation step of preparing a silicon single crystal substrate from a nitrogen-added silicon single crystal grown by an FZ method; a heat treatment step A of heat-treating; a particle beam irradiation step of irradiating the silicon single crystal substrate with a particle beam; and a heat treatment step B of heat-treating the silicon single crystal substrate, where in the heat treatment step A, a nitrogen concentration Cn of the silicon single crystal substrate is adjusted by outwardly diffusing nitrogen in the silicon single crystal substrate in accordance with an oxygen concentration Co of the silicon single crystal substrate prepared in the preparation step, then the particle beam irradiation step is performed. Consequently, a method for controlling recombination lifetime which can reduce a variation in recombination lifetime caused by a nitrogen-added FZ silicon single crystal substrate with certainty and highly precisely control the recombination lifetime is provided.
(FR) La présente invention concerne un procédé de commande pour des durées de vie de recombinaison caractérisé en ce qu'il consiste à commander la durée de vie de recombinaison de porteur dans un substrat de monocristal de silicium par réalisation d'une étape de préparation consistant à préparer un substrat de monocristal de silicium à partir d'un monocristal de silicium additionné d'azote cultivé selon le procédé FZ, une étape de chauffage A consistant à réaliser une application de chaleur, une étape de rayonnement de faisceau de particules consistant à soumettre le substrat de monocristal de silicium au rayonnement d'un faisceau de particules et une étape de chauffage B consistant à chauffer le substrat de monocristal de silicium; et en ce que la concentration d'azote Cn dans le substrat de monocristal de silicium est ajustée en amenant l'azote dans le substrat de monocristal de silicium à se diffuser vers l'extérieur dans l'étape de chauffage A en fonction de la concentration en oxygène Co dans le substrat de monocristal de silicium préparé dans l'étape de préparation et ensuite, l'étape de rayonnement de faisceau de particules est effectuée. Ainsi, l'invention concerne un procédé de commande pour durées de vie de recombinaison qui peut garantir une plus faible variabilité dans des durées de vie de recombinaison provenant de substrats de monocristal de silicium FZ additionné d'azote et peut commander des durées de vie de recombinaison selon un degré élevé de précision.
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