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1. EP3657257 - METHOD FOR OF MEASURING A FOCUS PARAMETER RELATING TO A STRUCTURE FORMED USING A LITHOGRAPHIC PROCESS

Office European Patent Office
Application Number 18208291
Application Date 26.11.2018
Publication Number 3657257
Publication Date 27.05.2020
Publication Kind A1
IPC
G03F 7/20
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printed surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
20Exposure; Apparatus therefor
CPC
G03F 7/70616
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
70483Information management, control, testing, and wafer monitoring, e.g. pattern monitoring
70616Wafer pattern monitoring, i.e. measuring printed patterns or the aerial image at the wafer plane
G03F 7/70641
GPHYSICS
03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR;
7Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
70Exposure apparatus for microlithography
70483Information management, control, testing, and wafer monitoring, e.g. pattern monitoring
70616Wafer pattern monitoring, i.e. measuring printed patterns or the aerial image at the wafer plane
70641Focus
Applicants ASML NETHERLANDS BV
Inventors LI FAHONG
SOKOLOV SERGEI
Designated States
Priority Data 18208291 26.11.2018 EP
Title
(DE) VERFAHREN ZUR MESSUNG EINES FOKUSPARAMETERS IN BEZUG AUF EINE STRUKTUR, DIE MITHILFE EINES LITHOGRAPHISCHEN VERFAHRENS HERGESTELLT WURDE
(EN) METHOD FOR OF MEASURING A FOCUS PARAMETER RELATING TO A STRUCTURE FORMED USING A LITHOGRAPHIC PROCESS
(FR) PROCÉDÉ PERMETTANT DE MESURER UN PARAMÈTRE FOCALISÉ SE RAPPORTANT À UNE STRUCTURE FORMÉE À L'AIDE D'UN PROCESSUS LITHOGRAPHIQUE
Abstract
(EN)
Disclosed is a method of measuring a focus parameter relating to formation of a structure using a lithographic process, and associated metrology device. The method comprises obtaining measurement data relating to a cross-polarized measurement of said structure; and determining a value for said focus parameter based on the measurement data.

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