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1. (EP3161182) PLASMA SOURCE AND SURFACE TREATMENT METHOD

Office : European Patent Office
Application Number: 15736674 Application Date: 25.06.2015
Publication Number: 3161182 Publication Date: 03.05.2017
Publication Kind : A1
Designated States: AL,AT,BA,BE,BG,CH,CY,CZ,DE,DK,EE,ES,FI,FR,GB,GR,HR,HU,IE,IS,IT,LI,LT,LU,LV,MC,ME,MK,MT,NL,NO,PL,PT,RO,RS,SE,SI,SK,SM,TR
Prior PCT appl.: Application Number:NL2015050463 ; Publication Number: Click to see the data
IPC:
C23C 16/455
C23C 16/513
H01J 37/32
H01L 21/314
H05H 1/24
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44
characterised by the method of coating
455
characterised by the method used for introducing gases into the reaction chamber or for modifying gas flows in the reaction chamber
C CHEMISTRY; METALLURGY
23
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
C
COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
16
Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition (CVD) processes
44
characterised by the method of coating
50
using electric discharges
513
using plasma jets
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
J
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37
Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
32
Gas-filled discharge tubes
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31
to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
314
Inorganic layers
H ELECTRICITY
05
ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
H
PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY- CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
1
Generating plasma; Handling plasma
24
Generating plasma
CPC:
C23C 16/45514
C23C 16/45504
C23C 16/45536
C23C 16/4583
C23C 16/509
C23C 16/513
H01J 37/32348
H01J 37/32366
H01J 37/3244
H01J 37/32541
H01J 37/32568
H01J 37/32715
H01J 37/32825
H01J 2237/332
H05H 1/2406
H05H 2001/2412
Applicants: NEDERLANDSE ORGANISATIE VOOR TOEGEPAST- NATUURWETENSCHAPPELIJK ONDERZOEK TNO
Inventors: CREYGHTON YVES LODEWIJK MARIA
POODT PAULUS WILLIBRORDUS GEORGE
SIMOR MARCEL
ROOZEBOOM FREDDY
Priority Data: 14173878 25.06.2014 EP
2015050463 25.06.2015 NL
Title: (DE) PLASMAQUELLE UND OBERFLÄCHENBEHANDLUNGSVERFAHREN
(EN) PLASMA SOURCE AND SURFACE TREATMENT METHOD
(FR) SOURCE DE PLASMA ET PROCÉDÉ DE TRAITEMENT DE SURFACE
Abstract:
(EN) Plasma source and surface treatment method. A plasma source has an outer surface (12), interrupted by an aperture (14) for delivering an atmospheric plasma from the outer surface. A transport mechanism (11) transports a substrate (10) in parallel with the outer surface, closely to the outer surface, so that gas from the atmospheric plasma may form a gas bearing between the outer surface the and the substrate. A first electrode (16a,b) of the plasma source has a first and second surface extending from an edge of the first electrode that runs along the aperture. The first surface defines the outer surface on a first side of the aperture. The distance between the first and second surface increasing with distance from the edge. A second electrode (17) covered at least partly by a dielectric layer (18) is provided with the dielectric layer facing the second surface of the first electrode, substantially in parallel with the second surface of the first electrode, leaving a plasma initiation space on said first side of the aperture, between the surface of the dielectric layer and the second surface of the first electrode. A gas inlet (19a,b) feeds into the plasma initiation space to provide gas flow from the gas inlet to the aperture through the plasma initiation space. Atmospheric plasma initiated in the plasma initiation space flows to the aperture, from which it leaves to react with the surface of the substrate.
(FR) L'invention concerne une source de plasma et un procédé de traitement de surface. Une source de plasma présente une surface extérieure (12), interrompue par une ouverture (14) pour distribuer un plasma atmosphérique depuis la surface extérieure. Un mécanisme de transport (11) transporte un substrat (10) en parallèle avec la surface extérieure, à proximité de la surface extérieure, de sorte qu'un gaz provenant du plasma atmosphérique puisse former un palier à gaz entre la surface extérieure et le substrat. Une première électrode (16a,b) de la source de plasma comporte une première et une seconde surface s'étendant depuis un bord de la première électrode qui s'étend le long de l'ouverture. La première surface délimite la surface extérieure sur un premier côté de l'ouverture. La distance entre la première et la seconde surface augmente avec la distance à partir du bord. Une seconde électrode (17) recouverte au moins en partie par une couche diélectrique (18) est dotée de la couche diélectrique faisant face à la seconde surface de la première électrode, sensiblement en parallèle avec la seconde surface de la première électrode, en laissant un espace d'amorçage de plasma sur ledit premier côté de l'ouverture, entre la surface de la couche diélectrique et la seconde surface de la première électrode. Une entrée de gaz (19a,b) donne sur l'espace d'amorçage de plasma pour former un écoulement de gaz de l'entrée de gaz à l'ouverture, à travers l'espace d'amorçage de plasma. Le plasma atmosphérique amorcé dans l'espace d'amorçage de plasma s'écoule vers l'ouverture, qu'il quitte pour réagir avec la surface du substrat.
Also published as:
US20170137939WO/2015/199539