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1. (EP1918069) DOUBLE SIDE POLISHING METHOD FOR WAFER

Office : European Patent Office
Application Number: 06767473 Application Date: 28.06.2006
Publication Number: 1918069 Publication Date: 07.05.2008
Publication Kind : B1
Designated States: DE
Prior PCT appl.: Application Number:JP2006312856 ; Publication Number: Click to see the data
IPC:
B24B 37/00
B24B 37/08
B24B 57/00
H01L 21/304
B PERFORMING OPERATIONS; TRANSPORTING
24
GRINDING; POLISHING
B
MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
37
Lapping machines or devices; Accessories
B PERFORMING OPERATIONS; TRANSPORTING
24
GRINDING; POLISHING
B
MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
37
Lapping machines or devices; Accessories
04
designed for working plane surfaces
07
characterised by the movement of the work or lapping tool
08
for double side lapping
B PERFORMING OPERATIONS; TRANSPORTING
24
GRINDING; POLISHING
B
MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
57
Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30
Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
302
to change the physical characteristics of their surfaces, or to change their shape, e.g. etching, polishing, cutting
304
Mechanical treatment, e.g. grinding, polishing, cutting
CPC:
B24B 37/08
H01L 21/02024
Applicants: SHINETSU HANDOTAI KK
Inventors: UENO JUNICHI
KOBAYASHI SYUICHI
Priority Data: 2005209216 19.07.2005 JP
2006312856 28.06.2006 JP
Title: (DE) VERFAHREN ZUM DOPPELSEITIGEN POLIEREN VON WAFERN
(EN) DOUBLE SIDE POLISHING METHOD FOR WAFER
(FR) PROCÉDÉ DE POLISSAGE DOUBLE FACE DESTINÉ À UNE PLAQUETTE
Abstract: front page image
(EN) There is provided a double-side polishing method for a wafer of sandwiching a wafer held in a carrier between upper and lower turn tables each having a polishing pad attached thereto and simultaneously polishing both surfaces of the wafer while supplying a slurry to a space between the upper and lower turn tables from a plurality of slurry supply holes provided in the upper turn table, wherein a polishing amount at an outer peripheral portion of the wafer to be polished is adjusted and outer peripheral sag of the wafer is suppressed by supplying the slurry in such a manner that an amount of the slurry supplied from the slurry supply holes provided on an outer side relative to the center of rotation of the upper turn table becomes larger than an amount of the slurry supplied from the slurry supply holes provided on an inner side relative to the same at the time of polishing both the surfaces of the wafer. As a result, the double-side polishing method which can suppress occurrence of the outer peripheral sag of the wafer when the wafer is subjected to double-side polishing can be provided.
(FR) La présente invention concerne un procédé de polissage double face destiné à une plaquette, permettant de polir simultanément les deux faces d’une plaquette maintenue par un porteur, la plaquette étant enserrée entre une plaque de surface supérieure et une plaque de surface inférieure sur lesquelles est appliqué un tissu de polissage et une pâte étant appliquée entre une plaque de surface supérieure et une plaque de surface inférieure depuis une pluralité d’orifices d’alimentation en pâte disposés dans la plaque de surface supérieure. Lorsque les deux faces de la plaquette sont polies, la quantité de pâte provenant des orifices d’alimentation en pâte disposés à l’extérieur du centre de rotation de la plaque de surface supérieure est fixée de manière à être supérieure à la quantité de pâte appliquée depuis les orifices d’alimentation en pâte disposés au centre. Ainsi, la quantité de polissage de la partie circonférentielle externe de la plaquette est réglée de manière à supprimer l’affaissement circonférentiel externe de la plaquette. On supprime ainsi l’apparition d’un affaissement circonférentiel externe d’une plaquette lorsque ses deux faces sont polies.
Also published as:
KR1020080033275US20090124175CN101223006WO/2007/010717