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1. (EP1900036) GROUP III NITRIDE LAYERS ON SILICON CARBIDE SUBSTRATES

Office : European Patent Office
Application Number: 06739327 Application Date: 20.03.2006
Publication Number: 1900036 Publication Date: 19.03.2008
Publication Kind : B1
Designated States: AL, AT, BA, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, NL, PL, PT, RO, SE, SI, SK, TR, YU
Prior PCT appl.: Application Number:US2006010482 ; Publication Number: Click to see the data
IPC:
H01L 29/778
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
778
with two-dimensional charge carrier gas channel, e.g. HEMT
Applicants: CREE INC
Inventors: SAXLER ADAM WILLIAM
Priority Data: 16947105 29.06.2005 US
2006010482 20.03.2006 US
Title: (DE) GRUPPE-III-NITRIDSCHICHTEN AUF SILIZIUMCARBIDSUBSTRATEN
(EN) GROUP III NITRIDE LAYERS ON SILICON CARBIDE SUBSTRATES
(FR) COUCHES DE NITRURE DU GROUPE III SUR DES SUBSTRATS DE CARBURE DE SILICIUM
Abstract: front page image
(EN) Group III nitride semiconductor device structures are provided that include a silicon carbide (SiC) substrate and a Group III nitride epitaxial layer above the SiC substrate. The Group III nitride epitaxial layer has a dislocation density of less than about 4x108 cm-2 and/or an isolation voltage of at least about 50V.
(FR) L'invention concerne des structures de semiconducteurs en nitrure du Groupe III incluant un substrat en carbure de silicium (SiC) et une couche épitaxique de nitrure du Groupe III sur ce substrat en SiC. La couche épitaxique de nitrure du Groupe III a une densité des dislocations inférieure à environ 4x108 cm-2 et/ou une tension d'isolement d'au moins environ 50 V.
Also published as:
JP2008545270WO/2007/005074