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1. (EP0919020) VOLTAGE DIVIDER CIRCUIT

Office : European Patent Office
Application Number: 98913995 Application Date: 27.04.1998
Publication Number: 0919020 Publication Date: 02.06.1999
Publication Kind : A2
Designated States: DE, FR, GB
Prior PCT appl.: Application Number:IB1998000640 ; Publication Number: Click to see the data
IPC:
G 05F
G05F 3/24
G PHYSICS
05
CONTROLLING; REGULATING
F
SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
3
Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
02
Regulating voltage or current
08
wherein the variable is dc
10
using uncontrolled devices with non-linear characteristics
16
being semiconductor devices
20
using diode-transistor combinations
24
wherein the transistors are of the field-effect type only
G PHYSICS
05
CONTROLLING; REGULATING
F
SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
3
Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
02
Regulating voltage or current
08
wherein the variable is dc
10
using uncontrolled devices with non-linear characteristics
16
being semiconductor devices
20
using diode-transistor combinations
24
wherein the transistors are of the field-effect type only
CPC:
G05F 3/242
Applicants: KONINKL PHILIPS ELECTRONICS NV
Inventors: WOMACK RICHARD H
Priority Data: 9800640 27.04.1998 IB
08854712 12.05.1997 US
Title: (DE) SPANNUNGSTEILERSCHALTUNG
(EN) VOLTAGE DIVIDER CIRCUIT
(FR) CIRCUIT DIVISEUR DE TENSION
Abstract:
(EN) A voltage divider is protected from current paths created by parasitic devices. The voltage divider includes a first string of diode-connected MOS transistors and a second string of diode-connected MOS transistors. A substrate bias terminal of each transistor in the first string is coupled to a substrate bias terminal of a corresponding transistor in the second string. The first string of transistors provides an output voltage which is protected from current paths created by parasitic devices.
(FR) Un diviseur de tension est protégé des passages de courant créés par des dispositifs parasites. Ledit diviseur de tension comporte une première et une deuxième chaîne de transistors MOS montés en diodes. Une borne de polarisation de substrat de chaque transistor de la première chaîne est couplée à une borne de polarisation de substrat du transistor correspondant de la deuxième chaîne. La première chaîne de transistors produit une tension de sortie qui est protégée des passages de courant créés par des dispositifs parasites.
Also published as:
JP2000514939 WO/1998/052112