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1. DE102018130560 - OPTOELEKTRONISCHES HALBLEITERBAUELEMENT MIT EINER BRECHUNGSINDEXMODULATIONSSCHICHT UND VERFAHREN ZUR HERSTELLUNG DES OPTOELEKTRONISCHEN HALBLEITERBAUELEMENTS

Office Germany
Application Number 102018130560
Application Date 30.11.2018
Publication Number 102018130560
Publication Date 04.06.2020
Publication Kind A1
IPC
H01S 5/10
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
10Construction or shape of the optical resonator
H01S 5/125
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
10Construction or shape of the optical resonator
12the resonator having a periodic structure, e.g. in distributed feed-back  lasers
125Distributed Bragg reflector  lasers
H01S 5/183
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
10Construction or shape of the optical resonator
18Surface-emitting lasers
183having a vertical cavity
CPC
H01S 5/18311
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
10Construction or shape of the optical resonator ; , e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
18Surface-emitting [SE] lasers
183having a vertical cavity [VCSE-lasers]
18308having a special structure for lateral current or light confinement
18311using selective oxidation
H01S 5/18319
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
10Construction or shape of the optical resonator ; , e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
18Surface-emitting [SE] lasers
183having a vertical cavity [VCSE-lasers]
18308having a special structure for lateral current or light confinement
18319comprising a periodical structure in lateral directions
H01S 5/18341
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
10Construction or shape of the optical resonator ; , e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
18Surface-emitting [SE] lasers
183having a vertical cavity [VCSE-lasers]
18341Intra-cavity contacts
H01S 5/32341
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
30Structure or shape of the active region; Materials used for the active region
32comprising PN junctions, e.g. hetero- or double- heterostructures
323in AIIIBV compounds, e.g. AlGaAs-laser, ; InP-based laser
32308emitting light at a wavelength less than 900 nm
32341blue laser based on GaN or GaP
H01S 5/4087
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
4025Array arrangements, e.g. constituted by discrete laser diodes or laser bar
4087emitting more than one wavelength
H01S 5/423
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
5Semiconductor lasers
40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
42Arrays of surface emitting lasers
423having a vertical cavity
Applicants OSRAM Opto Semiconductors GmbH
Inventors Behringer Martin
Halbritter Hubert
Mohajerani Matin
Behres Alexander
Agents Müller Hoffmann & Partner Patentanwälte mbB
Title
(DE) OPTOELEKTRONISCHES HALBLEITERBAUELEMENT MIT EINER BRECHUNGSINDEXMODULATIONSSCHICHT UND VERFAHREN ZUR HERSTELLUNG DES OPTOELEKTRONISCHEN HALBLEITERBAUELEMENTS
Abstract
(DE)

Ein optoelektronisches Halbleiterbauelement umfasst einen ersten Resonatorspiegel (110), einen zur Strahlungserzeugung geeigneten aktiven Bereich (115), und einen zweiten Resonatorspiegel (120), die jeweils entlang einer ersten Richtung übereinander angeordnet sind. Das optoelektronische Halbleiterbauelement (10) umfasst weiterhin eine Brechungsindexmodulationsschicht (133) innerhalb eines optischen Resonators zwischen dem ersten Resonatorspiegel (110) und dem zweiten Resonatorspiegel (120). Die Brechungsindexmodulationsschicht (133) weist erste Bereiche (136) eines ersten Materials mit einem ersten Brechungsindex sowie zweite Bereiche (138) eines zweiten Materials mit einem zweiten Brechungsindex auf, wobei die ersten Bereiche (136) in einer zur ersten Richtung senkrechten Ebene angrenzend an die zweiten Bereiche (138) angeordnet sind. embedded image

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