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1. DE112018000650 - Vorrichtung und Verfahren zum Reinigen einer Einkristall-Ziehanlage

Office Germany
Application Number 112018000650
Application Date
Publication Number 112018000650
Publication Date 24.10.2019
Publication Kind T5
IPC
C30B 15/32
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
15Single-crystal growth by pulling from a melt, e.g. Czochralski method
32Seed holders, e.g. chucks
C30B 29/06
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
02Elements
06Silicon
C30B 35/00
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
35Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
CPC
B08B 9/0321
BPERFORMING OPERATIONS; TRANSPORTING
08CLEANING
BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
9Cleaning hollow articles by methods or apparatus specially adapted thereto
02Cleaning pipes or tubes or systems of pipes or tubes
027Cleaning the internal surfaces; Removal of blockages
032by the mechanical action of a moving fluid, e.g. by flushing
0321using pressurised, pulsating or purging fluid
C30B 15/00
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
15Single-crystal growth by pulling from a melt, e.g. Czochralski method
C30B 29/06
CCHEMISTRY; METALLURGY
30CRYSTAL GROWTH
BSINGLE-CRYSTAL-GROWTH
29Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
02Elements
06Silicon
B08B 1/006
BPERFORMING OPERATIONS; TRANSPORTING
08CLEANING
BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
1Cleaning by methods involving the use of tools, brushes, or analogous members
001characterised by the type of cleaning tool
006Wipes
B08B 1/008
BPERFORMING OPERATIONS; TRANSPORTING
08CLEANING
BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
1Cleaning by methods involving the use of tools, brushes, or analogous members
008using translating operative members
B08B 5/00
BPERFORMING OPERATIONS; TRANSPORTING
08CLEANING
BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
5Cleaning by methods involving the use of air flow or gas flow
Applicants SUMCO CORPORATION
Inventors Okita Kenji
Agents HOFFMANN - EITLE Patent- und Rechtsanwälte PartmbB
Priority Data PCT/JP2017/003796 02.02.2017 JP
Title
(DE) Vorrichtung und Verfahren zum Reinigen einer Einkristall-Ziehanlage
Abstract
(DE)

Eine Vorrichtung 10 zum Reinigen des Inneren einer Einkristall-Ziehanlage 1 enthält eine Hauptrohr-Einheit 11, die in eine Ziehkammer 1a eingefügt wird, und einen Reinigungsmechanismus 17 für eine innere Oberfläche, der an einem oberen Teil der Hauptrohr-Einheit vorgesehen ist, und die innere Oberfläche der Ziehkammer reinigt. Die Hauptrohr-Einheit enthält einen Unterschlupf-/Unterbringungsbereich 12, in dem ein Keimstück, das an dem unteren Ende eines Drahtes untergebracht ist und der das Keimstück darin beherbergt, und einen kontinuierlichen Extensionsmechanismus, der an dem unteren Teil der Hauptrohr-Einheit vorgesehen ist und bei der eine Vielzahl von Extensionsstäben 13A bis 13D zugegeben und verbunden werden können. Demzufolge wird die innere Oberfläche der Reinigungskammer effizient gereinigt. embedded image