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1. DE102010026098 - Ionisch gesteuertes Dreitorbauelement

Office Germany
Application Number 102010026098
Application Date 05.07.2010
Publication Number 102010026098
Publication Date 05.01.2012
Publication Kind A9
IPC
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
76
Unipolar devices
772
Field-effect transistors
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02
including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04
the substrate being a semiconductor body
10
including a plurality of individual components in a repetitive configuration
105
including field-effect components
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
39
Devices using superconductivity or hyperconductivity; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
22
Devices comprising a junction of dissimilar materials, e.g. Josephson-effect devices
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
39
Devices using superconductivity or hyperconductivity; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
16
Devices switchable between superconductive and normal states
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
39
Devices using superconductivity or hyperconductivity; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
02
Details
12
characterised by the material
G PHYSICS
01
MEASURING; TESTING
R
MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
33
Arrangements or instruments for measuring magnetic variables
02
Measuring direction or magnitude of magnetic fields or magnetic flux
035
using superconductive devices
G PHYSICS
01
MEASURING; TESTING
R
MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
29
Arrangements for measuring or indicating electric quantities not covered by groups G01R19/-G01R27/135
08
Measuring electromagnetic field characteristics
G PHYSICS
01
MEASURING; TESTING
N
INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
21
Investigating or analysing materials by the use of optical means, i.e. using infra-red, visible, or ultra-violet light
17
Systems in which incident light is modified in accordance with the properties of the material investigated
25
Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
31
Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
35
using infra-red light
H01L 29/772
H01L 27/105
H01L 39/22
H01L 39/16
H01L 39/12
G01R 33/035
CPC
H01L 39/223
G11C 13/0007
G11C 13/04
G11C 2213/17
G11C 2213/53
H01L 39/145
Applicants Forschungszentrum Jülich GmbH
Inventors Erfinder wird später genannt werden
Title
(DE) Ionisch gesteuertes Dreitorbauelement
Abstract
(DE)

Die Erfindung betrifft ein Dreitorbauelement, welches durch die Bewegung von Ionen schaltbar ist. Dieses umfasst eine Source-Elektrode, eine Drain-Elektrode und einen zwischen die Source-Elektrode und die Drain-Elektrode geschalteten Kanal aus einem Material, dessen elektronische Leitfähigkeit durch Zu- und/oder Abführung von Ionen veränderlich ist. Erfindungsgemäß umfasst das Dreitorbauelement ein mit einer Gate-Elektrode kontaktiertes Ionenreservoir, welches derart in Verbindung mit dem Kanal steht, dass es bei Beaufschlagung der Gate-Elektrode mit einem Potential Ionen mit dem Kanal auszutauschen vermag. Es wurde erkannt, dass in der Verteilung der insgesamt in Ionenreservoir und Kanal vorhandenen Ionen auf Ionenreservoir und Kanal Information in dem Dreitorbauelement gespeichert werden kann. Die Verteilung der Ionen auf den Kanal und auf das Ionenreservoir ändert sich dann und nur dann, wenn ein entsprechendes treibendes Potential an der Gate-Elektrode angelegt wird. Im Gegensatz zu RRAMs existiert daher kein „time-voltage dilemma”.