Processing

Please wait...

Settings

Settings

Goto Application

1. DE000060121043 - MTJ MRAM SERIELLE-PARALLELE ARCHITEKTUR

Office
Germany
Application Number 60121043
Application Date 24.08.2001
Publication Number 000060121043
Publication Date 02.11.2006
Publication Kind T2
IPC
G11C 11/16
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
02using magnetic elements
16using elements in which the storage effect is based on magnetic spin effect
CPC
H01L 27/228
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
22including components using galvano-magnetic effects, e.g. Hall effects; using similar magnetic field effects
222Magnetic non-volatile memory structures, e.g. MRAM
226comprising multi-terminal components, e.g. transistors
228of the field-effect transistor type
G11C 11/15
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
11Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
02using magnetic elements
14using thin-film elements
15using multiple magnetic layers
Applicants FREESCALE SEMICONDUCTOR INC
Inventors NAJI K
DEHERRERA MARK
DURLAM MARK
Priority Data 0126571 24.08.2001 US
09649117 28.08.2000 US
Title
(DE) MTJ MRAM SERIELLE-PARALLELE ARCHITEKTUR
Abstract