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1. CN103608901 - Adhesive tape for semiconductor device dicing

Office
China
Application Number 201280029289.9
Application Date 17.10.2012
Publication Number 103608901
Publication Date 26.02.2014
Grant Number 103608901
Grant Date 25.11.2015
Publication Kind B
IPC
H01L 21/301
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
301to subdivide a semiconductor body into separate parts, e.g. making partitions
C09J 7/02
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
7Adhesives in the form of films or foils
02on carriers
C09J 201/00
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
201Adhesives based on unspecified macromolecular compounds
CPC
H01L 21/6836
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; ; Apparatus not specifically provided for elsewhere
683for supporting or gripping
6835using temporarily an auxiliary support
6836Wafer tapes, e.g. grinding or dicing support tapes
H01L 2221/68327
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2221Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
683for supporting or gripping
68304using temporarily an auxiliary support
68327used during dicing or grinding
H01L 2221/68381
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2221Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
683for supporting or gripping
68304using temporarily an auxiliary support
68381Details of chemical or physical process used for separating the auxiliary support from a device or wafer
C09J 7/29
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIAL AS ADHESIVES
7Adhesives in the form of films or foils
20characterised by their carriers
29Laminated material
C09J 2203/326
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIAL AS ADHESIVES
2203Applications of adhesives in processes or use of adhesives in the form of films or foils
326for bonding electronic components such as wafers, chips or semiconductors
C09J 2301/162
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIAL AS ADHESIVES
2301Additional features of adhesives in the form of films or foils
10characterized by the structural features of the adhesive tape or sheet
16by the structure of the carrier layer
162the carrier being a laminate constituted by plastic layers only
Applicants 古河电气工业株式会社
Inventors 大田乡史
冈本和幸
Agents 北京三友知识产权代理有限公司 11127
北京三友知识产权代理有限公司 11127
Priority Data 2011232278 21.10.2011 JP
Title
(EN) Adhesive tape for semiconductor device dicing
(ZH) 半导体装置用的切割加工用粘结带
Abstract
(EN) The invention provides an adhesive tape (100) for semiconductor device dicing, which is obtained by forming a radiation-curable adhesive layer (20) on a base film (10). The base film (10) is formed of two or more base resin film layers. A base resin film layer (2) that is adjacent to the adhesive layer has a melting point of 100-120 DEG C, while a base resin film layer (1) that is adjacent to the adhesive layer-side base resin film layer on the reverse side of the adhesive layer side has a melting point of 140-150 DEG C.
(ZH)

本发明的半导体装置切割用粘结带100是通过在基材膜10上形成放射线固化型粘结剂层20而得到的,其中,上述基材膜10由2层以上的基材树脂膜层构成,邻接于上述粘结剂层侧的基材树脂膜层2的熔点为100℃~120℃,与该粘结剂层侧的基材树脂膜层在与上述粘结剂层相反侧邻接的基材树脂膜层1的熔点为140℃~150℃。