CN102844844 Improved method and apparatus for laser singulation of brittle materials

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China

Application Number 201180017460.X

Application Date 31.03.2011

Publication Number 102844844

Publication Date 26.12.2012

Grant Number 102844844

Grant Date 25.11.2015

Publication Kind B

IPC

CPC

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Applicants 伊雷克托科学工业股份有限公司

Inventors 大迫康
达瑞·芬恩

Agents 北京银龙知识产权代理有限公司 11243
北京银龙知识产权代理有限公司 11243

Priority Data 12753367 02.04.2010 US

Title

(EN) Improved method and apparatus for laser singulation of brittle materials

(ZH) 用于易碎材料的镭射单一化的改善的方法及装置

Abstract

(EN) An improved method for singulation of electronic substrates 60 into dice uses a laser 70 to first form cuts 62 in the substrate 60 and then chamfers 66, 67 the edges 63 of the cuts 62 by altering the laser parameters. The chamfers 66, 67 increase die break strength by reducing the residual damage and removes debris caused by the initial laser cut 62 without requiring additional process steps, additional equipment or consumable supplies.

H	ELECTRICITY
01	BASIC ELECTRIC ELEMENTS
L	SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21	Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02	Manufacture or treatment of semiconductor devices or of parts thereof
04	the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18	the devices having semiconductor bodies comprising elements of group IV of the Periodic System or A_IIIB_V compounds with or without impurities, e.g. doping materials
30	Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
301	to subdivide a semiconductor body into separate parts, e.g. making partitions

H	ELECTRICITY
01	BASIC ELECTRIC ELEMENTS
L	SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21	Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70	Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77	Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78	with subsequent division of the substrate into plural individual devices

H	ELECTRICITY
01	BASIC ELECTRIC ELEMENTS
L	SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21	Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02	Manufacture or treatment of semiconductor devices or of parts thereof
04	the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18	the devices having semiconductor bodies comprising elements of group IV of the Periodic System or A_IIIB_V compounds with or without impurities, e.g. doping materials
30	Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
301	to subdivide a semiconductor body into separate parts, e.g. making partitions

H	ELECTRICITY
01	BASIC ELECTRIC ELEMENTS
L	SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21	Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70	Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77	Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78	with subsequent division of the substrate into plural individual devices

B	PERFORMING OPERATIONS; TRANSPORTING
23	MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
K	SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
26	Working by laser beam, e.g. welding, cutting or boring
02	Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
06	Shaping the laser beam, e.g. by masks or multi-focusing
062	by direct control of the laser beam
0626	Energy control of the laser beam

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1. CN102844844 - Improved method and apparatus for laser singulation of brittle materials