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1. CN102301465 - Through substrate vias

Office
China
Application Number 201080005862.3
Application Date 29.04.2010
Publication Number 102301465
Publication Date 28.12.2011
Publication Kind A
IPC
H01L 21/768
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
71Manufacture of specific parts of devices defined in group H01L21/7086
768Applying interconnections to be used for carrying current between separate components within a device
H01L 23/48
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads or terminal arrangements
CPC
H01L 21/76898
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
71Manufacture of specific parts of devices defined in group H01L21/70
768Applying interconnections to be used for carrying current between separate components within a device ; comprising conductors and dielectrics
76898formed through a semiconductor substrate
H01L 23/481
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; ; Selection of materials therefor
481Internal lead connections, e.g. via connections, feedthrough structures
H01L 2924/0002
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2924Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
0001Technical content checked by a classifier
0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
H01L 2924/09701
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
2924Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
095with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
097Glass-ceramics, e.g. devitrified glass
09701Low temperature co-fired ceramic [LTCC]
Applicants International Business Machines Corporation
国际商业机器公司
Inventors Webb Bucknell
B.韦伯
Cotte John Michael
J.M.科特
Jahnes Christopher Vincent
C.V.贾尼斯
Agents qiu jun
北京市柳沈律师事务所 11105
Priority Data 12432243 29.04.2009 US
Title
(EN) Through substrate vias
(ZH) 贯穿衬底的通路
Abstract
(EN)
Methods and apparatus for forming through-vias are presented, for example, a method for forming a via in a portion of a semiconductor wafer comprising a substrate. The method comprises forming a trench surrounding a first part of the substrate such that the first part is separated from a second part of the substrate, forming a hole through the substrate within the first part, and forming a first metal within the hole. The trench extends through the substrate. The first metal extends from a front surface of the substrate to a back surface of the substrate. The via (240) comprises the hole and the first metal.

(ZH)

提供用于形成贯穿通路的方法和设备,例如,提供一种在包括衬底的半导体晶片的一部分中形成通路的方法。该方法包括:形成围绕衬底的第一部分的沟槽,使得第一部分与衬底的第二部分分离;在第一部分中形成贯穿衬底的孔;以及在孔中形成第一金属。沟槽贯穿衬底延伸。第一金属从衬底的前表面延伸到衬底的后表面。通路(240)包括孔和第一金属。