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1. CN102165574 - Bonding on silicon substrate having a groove

Office
China
Application Number 200980137309.2
Application Date 18.09.2009
Publication Number 102165574
Publication Date 24.08.2011
Publication Kind A
IPC
H01L 21/60
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/06-H01L21/326162
60Attaching leads or other conductive members, to be used for carrying current to or from the device in operation
H01L 41/053
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
02Details
04of piezo-electric or electrostrictive elements
053Mounts, supports, enclosures or casings
CPC
H01L 41/0973
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
08Piezo-electric or electrostrictive devices
09with electrical input and mechanical output ; , e.g. actuators, vibrators
0926using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
0973Membrane type
H01L 41/313
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
41Piezo-electric devices in general; Electrostrictive devices in general; Magnetostrictive devices in general; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
22Processes or apparatus specially adapted for the assembly, manufacture or treatment of piezo-electric or electrostrictive devices or of parts thereof
31Applying piezo-electric or electrostrictive parts or bodies onto an electrical element or another base
312by laminating or bonding of piezo-electric or electrostrictive bodies
313by metal fusing or with adhesives
Y10T 29/42
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
10TECHNICAL SUBJECTS COVERED BY FORMER USPC
TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
29Metal working
42Piezoelectric device making
Y10T 156/10
YSECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
10TECHNICAL SUBJECTS COVERED BY FORMER USPC
TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
156Adhesive bonding and miscellaneous chemical manufacture
10Methods of surface bonding and/or assembly therefor
Applicants Fujifilm Dimatix Inc.
富士胶卷迪马蒂克斯股份有限公司
Inventors Menzel Christoph
克里斯托弗·门泽尔
Debrabander Gregory
格雷戈里·黛布拉班德
Nistorica Corina
科琳娜·尼斯托利卡
Agents qiu jun
北京市柳沈律师事务所 11105
Priority Data 61/098,187 18.09.2008 US
Title
(EN) Bonding on silicon substrate having a groove
(ZH) 具有凹槽的硅基底上的接合
Abstract
(EN) A method and apparatus for bonding on a silicon substrate are disclosed. An apparatus includes a membrane having a membrane surface, a groove in the membrane surface, a transducer having a transducer surface substantially parallel to the membrane surface, and an adhesive connecting the membrane surface to the transducer surface. The groove can be configured to permit flow of adhesive into and through the groove while minimizing voids or air gaps that could result from incomplete filling of the groove. Multiple grooves can be formed in the membrane surface and can be of uniform depth.
(ZH)

公开了一种在硅基底上接合的方法及装置。装置包括具有膜表面的膜、膜表面上的凹槽、具有和膜表面基本平行的换能器表面的换能器、和将膜表面连接在换能器表面上的粘接剂。该凹槽可被设置为允许粘接剂流入且流经凹槽,而同时最小化可由凹槽的不完全填充引起的空洞或气隙。多个凹槽可被形成在膜表面上且具有一致的深度。