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1. CN101689412 - Insulating film material, multilayer wiring board and process for producing the multilayer wiring board, and semiconductor apparatus and process for producing the semiconductor device

Office
China
Application Number 200880023571.X
Application Date 15.05.2008
Publication Number 101689412
Publication Date 31.03.2010
Grant Number 101689412
Grant Date 14.10.2015
Publication Kind B
IPC
C08L 83/16
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
83Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen, or carbon only; Compositions of derivatives of such polymers
16in which all the silicon atoms are connected by linkages other than oxygen atoms
H01B 3/46
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
3Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
18mainly consisting of organic substances
30plastics; resins; waxes
46silicones
H05K 3/46
HELECTRICITY
05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
3Apparatus or processes for manufacturing printed circuits
46Manufacturing multi-layer circuits
H01L 23/12
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
12Mountings, e.g. non-detachable insulating substrates
H01L 21/312
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
04the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18the devices having semiconductor bodies comprising elements of group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20-H01L21/26142
31to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers; Selection of materials for these layers
312Organic layers, e.g. photoresist
CPC
C08G 77/60
CCHEMISTRY; METALLURGY
08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
77Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
60in which all the silicon atoms are connected by linkages other than oxygen atoms
C09D 183/16
CCHEMISTRY; METALLURGY
09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
183Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
16in which all the silicon atoms are connected by linkages other than oxygen atoms
H01B 3/46
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
3Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
18mainly consisting of organic substances
30plastics; resins; waxes
46silicones
H01L 21/02123
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02109characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
02112characterised by the material of the layer
02123the material containing silicon
H01L 21/02211
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02109characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
02205the layer being characterised by the precursor material for deposition
02208the precursor containing a compound comprising Si
02211the compound being a silane, e.g. disilane, methylsilane or chlorosilane
H01L 21/02282
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02Manufacture or treatment of semiconductor devices or of parts thereof
02104Forming layers
02107Forming insulating materials on a substrate
02225characterised by the process for the formation of the insulating layer
0226formation by a deposition process
02282liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
Applicants 富士通株式会社
Inventors 小林靖志
中田义弘
尾崎史朗
Agents 隆天知识产权代理有限公司 72003
隆天知识产权代理有限公司 72003
Priority Data PCT/JP2007/063586 06.07.2007 JP
Title
(EN) Insulating film material, multilayer wiring board and process for producing the multilayer wiring board, and semiconductor apparatus and process for producing the semiconductor device
(ZH) 绝缘膜材料、多层布线基板及其制造方法和半导体装置及其制造方法
Abstract
(EN)
This invention provides an insulating film material suitable for the formation of a low-permittivity and high-strength insulating film, a multilayer wiring board, which can realize a reduced parasiticcapacitance between wirings, and a process for producing the multilayer wiring board, and a high-speed and highly reliable semiconductor device and a process for producing the semiconductor device. The insulating film material is characterized by comprising at least a polycarbosilane compound having a structure represented by the following structural formula (1). [Chemical formula 25] structuralformula (1) wherein R1s, which may be the same or different in repetition of n times, and represent any of a hydrocarbon having 1 to 4 carbon atoms and aromatic hydrocarbons; R2s, which may be the same or different in repetition of n times, and represent any of a hydrocarbon having 1 to 4 carbon atoms and aromatic hydrocarbons; and n is an integer of 5 to 5,000.

(ZH)

本发明的目的在于提供一种能够适合用于形成低介电常数且高强度的绝缘膜材料、能降低布线间的寄生电容的多层布线基板及其制造方法,和高速且可靠性高的半导体装置及其制造方法。本发明的绝缘膜材料的特征在于,至少含有具有由下述结构式(1)表示的结构的聚碳硅烷化合物,其中,在前述结构式(1)中,R1在n个重复单元中相互相同或者不同,表示碳原子数为1~4的烃和芳香族烃中的任一种;R2在n个重复单元中相互相同或者不同,表示碳原子数为1~4的烃和芳香族烃中的任一种;n表示5~5000的整数,结构式(1)。