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1. CN101461010 - Refreshing a phase change memory

Office China
Application Number 200780020932.0
Application Date 24.04.2007
Publication Number 101461010
Publication Date 17.06.2009
Publication Kind A
IPC
G11C 16/02
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
16Erasable programmable read-only memories
02electrically programmable
H01L 45/00
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
45Solid state devices specially adapted for rectifying, amplifying, oscillating, or switching without a potential-jump barrier or surface barrier, e.g. dielectric triodes; Ovshinsky-effect devices; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof
CPC
G11C 13/0069
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
13Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00
0002using resistive RAM [RRAM] elements
0021Auxiliary circuits
0069Writing or programming circuits or methods
G11C 13/0004
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
13Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00
0002using resistive RAM [RRAM] elements
0004comprising amorphous/crystalline phase transition cells
G11C 13/0033
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
13Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00
0002using resistive RAM [RRAM] elements
0021Auxiliary circuits
0033Disturbance prevention or evaluation; Refreshing of disturbed memory data
G11C 16/3431
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
16Erasable programmable read-only memories
02electrically programmable
06Auxiliary circuits, e.g. for writing into memory
34Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
3418Disturbance prevention or evaluation; Refreshing of disturbed memory data
3431Circuits or methods to detect disturbed nonvolatile memory cells, e.g. which still read as programmed but with threshold less than the program verify threshold or read as erased but with threshold greater than the erase verify threshold, and to reverse the disturbance via a refreshing programming or erasing step
G11C 2013/0078
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
13Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00
0002using resistive RAM [RRAM] elements
0021Auxiliary circuits
0069Writing or programming circuits or methods
0078Write using current through the cell
G11C 2207/229
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
2207Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
22Control and timing of internal memory operations
229Timing of a write operation
Applicants Ovonyx Inc.
奥沃尼克斯股份有限公司
Inventors Hudgens Stephen J.
S·J·赫金斯
Agents wang yong jiang hua
北京泛华伟业知识产权代理有限公司
北京泛华伟业知识产权代理有限公司
Priority Data 11447821 06.06.2006 US
Title
(EN) Refreshing a phase change memory
(ZH) 刷新相变存储器
Abstract
(EN)
A phase change memory may be utilized in place of a dynamic random access memory in a processor-based system. In some embodiments, a chalcogenide material, used for the phase change memory, has relatively high crystallization speed so that it may be quickly programmed. Materials may be chosen which have high crystallization speed and corresponding poor data retention. The poor data retention may be compensated by providing a refresh cycle.

(ZH)

本发明公开了一种可代替动态随机存取存储器用于基于处理器系统的相变存储器。在一些实施例中,用于相变存储器的硫属化物材料具有相对高的结晶速度以使其能被快速编程。可选择具有高结晶速度和相应的数据保留性差的材料。可通过提供刷新循环来补偿差的数据保留性。

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