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1. CN101460650 - Cold-pressed sputter targets

Office China
Application Number 200780020115.5
Application Date 30.05.2007
Publication Number 101460650
Publication Date 17.06.2009
Publication Kind A
IPC
C23C 14/34
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
34Sputtering
CPC
C23C 14/3414
CCHEMISTRY; METALLURGY
23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
14Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
22characterised by the process of coating
34Sputtering
3407Cathode assembly for sputtering apparatus, e.g. Target
3414Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
Applicants Heraeus GmbH W. C.
W.C.贺利氏有限公司
Inventors Schultheis Markus
马库斯·舒尔特海斯
Weigert Martin
马丁·魏格特
Agents ding yebeng zhang tianshu
北京天昊联合知识产权代理有限公司
北京天昊联合知识产权代理有限公司
Priority Data 102006026005.8 01.06.2006 DE
Title
(EN) Cold-pressed sputter targets
(ZH) 冷压溅射靶
Abstract
(EN)
The invention relates to a sputter target comprising a sputter material that is made of an alloy or a material mixture composed of at least two components which are in a state of thermodynamic disequilibrium. According to the invention, the components are compacted by means of an isostatic or uniaxial cold-pressing process.

(ZH)

本发明涉及一种包含溅射材料的溅射靶,所述溅射材料由合金或材料混合物制成,该合金或材料混合物由至少两种处于热力学不平衡状态的组分构成。根据本发明,所述组分是通过等静压冷压法或单轴冷压法来压缩的。