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1. CN101213669 - Separation type unit pixel of 3-dimensional image sensor and manufacturing method thereof

Office China
Application Number 200680023574.4
Application Date 27.06.2006
Publication Number 101213669
Publication Date 02.07.2008
Grant Number 101213669
Grant Date 06.04.2011
Publication Kind B
IPC
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27
Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
14
including semiconductor components sensitive to infra-red radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
144
Devices controlled by radiation
146
Imager structures
H01L 27/146
CPC
H01L 27/14634
H01L 27/14609
H01L 27/14623
H01L 27/14627
H01L 27/1464
H01L 27/14643
Applicants Siliconfile Technologies Inc.
(株)赛丽康
Inventors Lee Do Young
李道永
Agents yumang fangting
北京英赛嘉华知识产权代理有限责任公司 11204
北京英赛嘉华知识产权代理有限责任公司 11204
Priority Data 10-2005-0056036 28.06.2005 KR
Title
(EN) Separation type unit pixel of 3-dimensional image sensor and manufacturing method thereof
(ZH) 三维图像传感器的分离式单位像素及其制造方法
Abstract
(EN)
A separation type unit pixel of an image sensor, which can control light that incidents onto a photodiode at various angles, and be suitable for a zoom function in a compact camera module by securing an incident angle margin, and a manufacturing method thereof are provided. The unit pixel of an image sensor includes: a first wafer including a photodiode containing impurities having an impurity type opposite to that of a semiconductor material and a pad for transmitting photoelectric charge of the photodiode to outside; a second wafer including a pixel array region in which transistors except the photodiode are arranged regularly, a peripheral circuit region having an image sensor structure except the pixel array, and a pad for connecting pixels with one another; and a connecting means connecting the pad of the first wafer and the pad of the second wafer. Accordingly, manufacturing processes can be simplified by constructing the upper wafer using only a photodiode and the lower wafer using the pixel array region except the photodiode, and costs are reduced since transistors are not included in the upper wafer portion, which in turn cannot affect the interaction with light.

(ZH)

本发明提供了一种图像传感器的分离式单位像素及其制造方法,该分离式单位像素可控制以不同角度入射到光电二极管上的光线,并适于通过确保入射角裕度提供小型摄像模块中的缩放功能。图像传感器的单位像素包括:第一晶片,包括其中包含的杂质类型与半导体材料的杂质类型相反的光电二极管和用于将光电二极管的光电电荷传送到外部衬垫;第二晶片,包括规则地排列有除光电二极管外的晶体管的像素阵列区域、具有除像素阵列外的图像传感器结构的外围电路区域以及用于使像素相互连接的衬垫;以及对第一晶片的衬垫与第二晶片的衬垫进行连接的连接装置。因此,通过仅用光电二极管构造上部晶片并用除了光电二极管之外的像素阵列区域构造下部晶片,可简化制造工艺,并且由于在上部晶片部分中不包含晶体管,还降低了成本,而且这不会反过来影响与光线的相互作用。

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