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1. (CN101208802) Bipolar transistor and method for manufacturing same

Office : China
Application Number: 200680023063.2 Application Date: 20.06.2006
Publication Number: 101208802 Publication Date: 25.06.2008
Grant Number: 101208802 Grant Date: 07.09.2011
Publication Kind : B
Prior PCT appl.: Application Number:PCTIB2006051975 ; Publication Number:2007000683 Click to see the data
IPC:
H01L 29/732
H01L 21/331
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
29
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having at least one potential-jump barrier or surface barrier; Capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof
66
Types of semiconductor device
68
controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified, or switched
70
Bipolar devices
72
Transistor-type devices, i.e. able to continuously respond to applied control signals
73
Bipolar junction transistors
732
Vertical transistors
H ELECTRICITY
01
BASIC ELECTRIC ELEMENTS
L
SEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21
Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
02
Manufacture or treatment of semiconductor devices or of parts thereof
04
the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
18
the devices having semiconductor bodies comprising elements of the fourth group of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
328
Multistep processes for the manufacture of devices of the bipolar type, e.g. diodes, transistors, thyristors
33
the devices comprising three or more electrodes
331
Transistors
CPC:
H01L 29/66287
H01L 29/1004
H01L 29/66242
H01L 29/732
H01L 29/7378
Applicants: Nxp BV
NXP股份有限公司
Inventors: Hijzen Erwin
埃尔文·海曾
Melai Joost
约斯特·梅拉伊
Neuilly Francois
弗朗索瓦·纳耶
Agents: chenyuan zhangtian shu
中科专利商标代理有限责任公司 11021
Priority Data: 05105716.4 27.06.2005 EP
Title: (EN) Bipolar transistor and method for manufacturing same
(ZH) 双极晶体管及其制造方法
Abstract: front page image
(EN) The invention relates to a semiconductor device with a substrate (11) and a semiconductor body (11) comprising a bipolar transistor with an emitter region (1), a base region (2) and a collector region (3) comprising a first, a second and a third connection conductor, which emitter region (1) comprises a mesa-shaped emitter connection region (IA) provided with spacers (4) and adjacent thereto a base connection region (2A) comprising a conductive region (2AA) of poly crystalline silicon. In a device (10) according to the invention, the base connection region (2A) comprises a further conducting region (2AB), which is positioned between the conductive region (2AA) of poly crystalline silicon and the base region (2) and which is made of a material with respect to which the conducting region (2AA) of polycrystalline silicon is selectively etchable. Such a device (10) is easy to manufacture by means of a method according to the invention and its bipolar transistor possesses excellent RF properties.
(ZH)

本发明提供了一种双极晶体管及其制造方法,涉及一种具有基板(12)和包含一个双极晶体管的半导体主体(11)的半导体器件,该双极晶体管有包含第一连接导体、第二连接导体和第三连接导体的发射极区域(1)、基极区(2)和集电极区(3),发射极区域(1)包含一个被提供了一个隔离层(4)的台面形发射极连接区域(1A),以及邻近隔离层的包含多晶硅的导电区域(2AA)的基极连接区域(2A)。在按照本发明的器件中,基极连接区域(2A)包含另外的导电区域(2AB),其位于多晶硅的导电区域(2AA)和基极区(2)之间并由这样一种材料制成,多晶硅的导电区域(2AA)相对于该材料是选择性地可蚀刻的。通过按照本发明的方法,这样的器件(10)非常易于制造,该器件的双极晶体管拥有卓越的RF特性。


Also published as:
EP1900034JP2008544562US20090200577WO/2007/000683