(EN)
This invention discloses a one-time programmable (OTP) memory cell. The OTP memory cell includes a dielectric layer disposed between two conductive polysilicon segments wherein the dielectric layer is ready to change from a non-conductive state to a conductive state through an induced voltage breakdown. In a preferred embodiment, one of the conductive polysilicon segments further includes an etch undercut configuration for conveniently inducing the voltage breakdown in the dielectric layer. In a preferred embodiment, the dielectric layer is further formed as sidewalls covering the edges and corners of a first polysilicon segments to conveniently induce a voltage breakdown in the dielectric layer by the edge and corner electrical field effects.
(ZH) 本发明涉及一种一次性可编程(OTP)存储单元，该一次性可编程存储单元包含有一介电层，介电层设置于二导电多晶硅区块间，且预先通过电压击穿的诱发，而从非导电状态转变为导电状态，在较佳实施例中，导电多晶硅区块还包含蚀刻底切结构，便于诱发介电层上的电压击穿，另外，在较佳实施例中，介电层还形成为一个侧壁，覆盖导电多晶硅区块的边缘或隅角，便于通过边缘和隅角电场效应诱发介电层上的电压击穿。
