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1. CN101171684 - One time programmable memory cell

Office
China
Application Number 200680015034.1
Application Date 04.05.2006
Publication Number 101171684
Publication Date 30.04.2008
Grant Number 101171684
Grant Date 16.03.2011
Publication Kind B
IPC
H01L 23/62
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
23Details of semiconductor or other solid state devices
58Structural electrical arrangements for semiconductor devices not otherwise provided for
62Protection against overcurrent or overload, e.g. fuses, shunts
CPC
G11C 17/16
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
17Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
14in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
16using electrically-fusible links
G11C 17/18
GPHYSICS
11INFORMATION STORAGE
CSTATIC STORES
17Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
14in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
18Auxiliary circuits, e.g. for writing into memory
H01L 27/112
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
112Read-only memory structures ; [ROM] and multistep manufacturing processes therefor
H01L 27/11206
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
112Read-only memory structures ; [ROM] and multistep manufacturing processes therefor
11206Programmable ROM [PROM], e.g. memory cells comprising a transistor and a fuse or an antifuse
Applicants Alpha & Omega Semiconductor Ltd.
万国半导体股份有限公司
Inventors Hu Yongzhong
胡永中
Agents zhangtao
上海信好专利代理事务所(普通合伙) 31249
Priority Data 11122848 05.05.2005 US
Title
(EN) One time programmable memory cell
(ZH) 一次性可编程存储单元
Abstract
(EN) This invention discloses a one-time programmable (OTP) memory cell. The OTP memory cell includes a dielectric layer disposed between two conductive polysilicon segments wherein the dielectric layer is ready to change from a non-conductive state to a conductive state through an induced voltage breakdown. In a preferred embodiment, one of the conductive polysilicon segments further includes an etch undercut configuration for conveniently inducing the voltage breakdown in the dielectric layer. In a preferred embodiment, the dielectric layer is further formed as sidewalls covering the edges and corners of a first polysilicon segments to conveniently induce a voltage breakdown in the dielectric layer by the edge and corner electrical field effects.
(ZH)

本发明涉及一种一次性可编程(OTP)存储单元,该一次性可编程存储单元包含有一介电层,介电层设置于二导电多晶硅区块间,且预先通过电压击穿的诱发,而从非导电状态转变为导电状态,在较佳实施例中,导电多晶硅区块还包含蚀刻底切结构,便于诱发介电层上的电压击穿,另外,在较佳实施例中,介电层还形成为一个侧壁,覆盖导电多晶硅区块的边缘或隅角,便于通过边缘和隅角电场效应诱发介电层上的电压击穿。


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