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1. CN101080802 - Systems and methods for ion beam focusing

Office
China
Application Number 200580043440.4
Application Date 12.10.2005
Publication Number 101080802
Publication Date 28.11.2007
Grant Number 101080802
Grant Date 01.09.2010
Publication Kind B
IPC
H01J 37/317
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
30Electron-beam or ion-beam tubes for localised treatment of objects
317for changing properties of the objects or for applying thin layers thereon, e.g. ion implantation
H01J 37/147
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
02Details
04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
147Arrangements for directing or deflecting the discharge along a desired path
CPC
H01J 37/147
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
02Details
04Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
147Arrangements for directing or deflecting the discharge along a desired path
H01J 37/3171
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
30Electron-beam or ion-beam tubes for localised treatment of objects
317for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
3171for ion implantation
H01J 37/30
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
30Electron-beam or ion-beam tubes for localised treatment of objects
H01J 37/317
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
37Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
30Electron-beam or ion-beam tubes for localised treatment of objects
317for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
Applicants Axcelis Tech Inc.
艾克塞利斯技术公司
Inventors Benveniste Victor
V·班威尼斯特
Kellerman Peter
P·克雷曼
Agents zhangxue mei zhangzhi cheng
中国专利代理(香港)有限公司 72001
中国专利代理(香港)有限公司 72001
Priority Data 10967855 18.10.2004 US
Title
(EN) Systems and methods for ion beam focusing
(ZH) 用于离子束聚焦的系统和方法
Abstract
(EN) Systems and methods are provided for focusing a scanned ion beam in an ion implanter. A beam focusing system is provided, comprising first and second magnets providing corresponding magnetic fields that cooperatively provide a magnetic focusing field having a time-varying focusing field center generally corresponding to a time-varying beam position of a scanned ion beam along a scan direction. Methods are presented, comprising providing a focusing field having a focusing field center in the scan plane, and dynamically adjusting the focusing field such that the focusing field center is generally coincident with a time-varying beam position of the scanned ion beam along the scan direction.
(ZH)

提供了用于聚焦离子注入器(110)中的被扫描的离子束的系统与方法。一种束聚焦系统(140)被提供,其包含:第一与第二磁体,用以提供对应的磁场,其协同地提供具有时变的聚焦场中心的磁性聚焦场,该聚焦场中心通常对应于沿着扫描方向的被扫描的离子束的时变的束位置。提供了方法,包含:提供具有聚焦场中心的聚焦场于扫描平面内;以及动态调整该聚焦场,使得聚焦场中心通常符合于沿着扫描方向的被扫描的离子束的时变的束位置。