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1. CN114121813 - 一种存储器制作方法

Office
China
Application Number 202010895429.7
Application Date 31.08.2020
Publication Number 114121813
Publication Date 01.03.2022
Publication Kind A
IPC
H01L 21/8242
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
21Processes or apparatus specially adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
70Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in or on a common substrate or of specific parts thereof; Manufacture of integrated circuit devices or of specific parts thereof
77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
78with subsequent division of the substrate into plural individual devices
82to produce devices, e.g. integrated circuits, each consisting of a plurality of components
822the substrate being a semiconductor, using silicon technology
8232Field-effect technology
8234MIS technology
8239Memory structures
8242Dynamic random access memory structures (DRAM)
CPC
H01L 27/108
HELECTRICITY
01BASIC ELECTRIC ELEMENTS
LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
27Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
02including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
04the substrate being a semiconductor body
10including a plurality of individual components in a repetitive configuration
105including field-effect components
108Dynamic random access memory structures
Applicants 长鑫存储技术有限公司
Inventors 卢经文
Agents 上海晨皓知识产权代理事务所(普通合伙) 31260
Title
(ZH) 一种存储器制作方法
Abstract
(ZH) 本发明实施例提供一种存储器制作方法,包括:提供基底,在基底上形成牺牲层;图形化牺牲层,在基底上形成多个相互分立的伪位线层;形成支撑层,支撑层填充满相邻伪位线层之间的区域;去除伪位线层,形成位于相邻支撑层之间的位线空间;形成位线结构,位线结构填充位线空间,且位线结构包括依次堆叠的位线导电层以及位线绝缘层;去除支撑层,形成位于相邻位线层之间的开口。本发明实施例中提供的存储器制作方法,避免了在刻蚀形成位线结构出现的位线导电层形貌缺陷问题,同时也可避免位线导电层出现过刻蚀的情况,改善位线导电层的受损情况,从而提高位线导电层的导电能力,改善存储器的电学性能。
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