(EN) The invention provides a preparation method of a semiconductor structure and a semiconductor device. According to the gate structure formed by the preparation method, the side wall is flat and free of deformation, the reliability of a semiconductor device is greatly improved, and then the yield and the performance of the final device are further improved.
(ZH) 本发明提供一种半导体结构的制备方法及半导体器件。采用本发明制备方法形成的栅极结构,其侧壁平整,且没有变形,大大提高了半导体器件的可靠性,进而提高了最终器件的良率和性能。